Strauss-Soukup J K, Maher L J
Department of Biochemistry and Molecular Biology, University of Nebraska Medical Center, Omaha 68198, USA.
Biochemistry. 1998 Jan 27;37(4):1060-6. doi: 10.1021/bi972146p.
DNA architecture has been shown to be important for cellular processes such as activation of transcription, recombination, and replication. Many proteins reconfigure the shape of duplex DNA upon binding. Previous experiments have shown that some members of the eukaryotic bZIP family of DNA binding proteins appear to bend DNA, while others do not. We are exploring the role of electrostatic effects in DNA bending by bZIP proteins. The yeast bZIP transcription factor GCN4 does not induce DNA bending in vitro. Previously we substituted basic residues for three neutral amino acids in GCN4 to produce a GCN4 derivative that bends DNA by approximately 15 degrees. This result is consistent with a model of induced DNA bending wherein excess positive charge in proximity to one face of the double helix neutralizes local phosphate diester anions resulting in a laterally-asymmetric charge distribution along the DNA. Such an unbalanced charge distribution can result in collapse of the DNA toward the neutralized surface. We now present a more comprehensive analysis of electrostatic effects in DNA bending by GCN4 derivatives. It is shown that the direction and extent of DNA bending by these derivatives are a linear function of the charges of the amino acids adjacent to the basic domain of the protein. This relation holds over the charge range +6 (16 degrees bend toward the minor groove) to -6 (25 degrees bend toward the major groove).
DNA结构已被证明对细胞过程很重要,如转录激活、重组和复制。许多蛋白质在结合时会重新配置双链DNA的形状。先前的实验表明,真核生物bZIP家族的一些DNA结合蛋白成员似乎会使DNA弯曲,而其他成员则不会。我们正在探索静电效应在bZIP蛋白使DNA弯曲过程中的作用。酵母bZIP转录因子GCN4在体外不会诱导DNA弯曲。此前我们在GCN4中用碱性残基取代了三个中性氨基酸,以产生一种使DNA弯曲约15度的GCN4衍生物。这一结果与诱导DNA弯曲的模型一致,即在双螺旋的一个面附近的过量正电荷中和了局部磷酸二酯阴离子,导致沿DNA的横向不对称电荷分布。这种不平衡的电荷分布会导致DNA向被中和的表面塌陷。我们现在对GCN4衍生物使DNA弯曲过程中的静电效应进行了更全面的分析。结果表明,这些衍生物使DNA弯曲的方向和程度是与蛋白质碱性结构域相邻的氨基酸电荷的线性函数。这种关系在+6(向小沟弯曲16度)到-6(向大沟弯曲25度)的电荷范围内成立。