Suzuki K, Kodama S, Watanabe M
Laboratory of Radiation and Life Science, School of Pharmaceutical Sciences, Nagasaki University, Japan.
Radiat Res. 1998 Feb;149(2):195-201.
We examined the effects of X irradiation on activation of the promoter of the human HSP70B gene, which is activated only after heat shock. The HSP70B promoter was ligated to the bacterial beta-galactosidase (beta-gal) gene, and the reporter plasmid was transfected into NCI-H1299 carcinoma cells. The expression of the reporter gene was determined by an immunological assay using an anti-beta-gal monoclonal antibody. There was no expression of beta-gal protein in the control cells, and neither 2 cGy nor 6 Gy of X rays activated the HSP70B promoter. Heat-shock treatment at 43 degrees C for 2 h induced beta-gal expression, and this level was increased significantly by irradiation with 2 cGy of X rays 5 h before heat-shock treatment. This stimulative effect was not observed when cells were pretreated with 10 or 50 cGy of X rays. Furthermore, irradiation of cells with 6 Gy of X rays before or immediately after heat-shock treatment did not affect the level of beta-gal expression. In situ staining of beta-gal-positive cells using X-gal as substrate revealed that low-dose irradiation did not increase the overall level of induction of beta-gal but increased the number of cells capable of inducing beta-gal in response to heat shock. Since preirradiation with 2 cGy of X rays did not alter either the constitutive level or the induced level of HSP72, another member of the HSP70 family, the effect of low-dose irradiation may not be obvious if the promoter is already active. Thus these results indicate that pretreatment with low doses of ionizing radiation may enhance the susceptibility of cells to various stresses, which would then facilitate the activation of gene transcription in response to a subsequent insult.
我们研究了X射线照射对人HSP70B基因启动子激活的影响,该基因仅在热休克后被激活。将HSP70B启动子与细菌β-半乳糖苷酶(β-gal)基因连接,并将报告质粒转染至NCI-H1299癌细胞中。通过使用抗β-gal单克隆抗体的免疫测定法测定报告基因的表达。对照细胞中没有β-gal蛋白表达,2 cGy和6 Gy的X射线均未激活HSP70B启动子。43℃热休克处理2小时可诱导β-gal表达,并且在热休克处理前5小时用2 cGy的X射线照射可使该水平显著升高。当细胞用10或50 cGy的X射线预处理时,未观察到这种刺激作用。此外,在热休克处理之前或之后立即用6 Gy的X射线照射细胞,不影响β-gal表达水平。使用X-gal作为底物对β-gal阳性细胞进行原位染色显示,低剂量照射不会增加β-gal的总体诱导水平,但会增加能够响应热休克诱导β-gal的细胞数量。由于用2 cGy的X射线预照射不会改变HSP70家族的另一个成员HSP72的组成型水平或诱导水平,如果启动子已经活跃,低剂量照射的效果可能不明显。因此,这些结果表明,低剂量电离辐射预处理可能会增强细胞对各种应激的敏感性,从而促进基因转录在随后的损伤刺激下的激活。