Smith L A, Drake J W
Laboratory of Molecular Genetics, National Institute of Environmental Health Sciences, Research Triangle Park, North Carolina 27709-2233, USA.
Genetics. 1998 Apr;148(4):1611-8. doi: 10.1093/genetics/148.4.1611.
Bacteriophage T4 DNA metabolism is largely insulated from that of its host, although some host functions assist in the repair of T4 DNA damage. Environmental factors sometimes affect survival and mutagenesis after ultraviolet (UV) irradiation of T4, and can affect mutagenesis in many organisms. We therefore tested the effect of certain environmental factors and host genetic defects upon spontaneous and UV-induced mutagenesis and survival in T4 and some related T-even phages. Plating at pH 9 enhances UV resistance in T4 by about 14% compared to pH 7. The host cAMP regulatory system affects host survival after UV irradiation but does not affect T4 survival. Thermal rescue, the increasing survival of irradiated T4 with increasing plating temperature, occurs also in phage T6, but only weakly in phages T2 and RB69; this temperature effect is not altered by supplementing infected cells with additional Holliday resolvase (gp49) early in infection. Phage RB69 turns out to have almost 50% greater UV resistance than T4, but has a genome of about the same size; RB69 is UV-mutable but does not produce r mutants, which are easily seen in T2, T4, and T6. Spontaneous mutagenesis in T4 shows no dependence on medium and little dependence on temperature overall, but mutation rates can increase and probably decrease with temperature at specific sites. UV mutagenesis is not affected by incubating irradiated particles under various conditions before plating, in contrast to phage S13.
噬菌体T4的DNA代谢在很大程度上与其宿主的代谢相互隔离,尽管一些宿主功能有助于修复T4的DNA损伤。环境因素有时会影响T4紫外线(UV)照射后的存活和诱变,并能影响许多生物体的诱变。因此,我们测试了某些环境因素和宿主基因缺陷对T4及一些相关T偶数噬菌体自发和紫外线诱导的诱变及存活的影响。与pH 7相比,在pH 9条件下铺板可使T4的紫外线抗性提高约14%。宿主的cAMP调节系统影响紫外线照射后宿主的存活,但不影响T4的存活。热拯救现象,即随着铺板温度升高,受照射T4的存活率增加,在噬菌体T6中也会出现,但在噬菌体T2和RB69中则较弱;在感染早期向受感染细胞补充额外的霍利迪解离酶(gp49)不会改变这种温度效应。结果表明,噬菌体RB69的紫外线抗性比T4高近50%,但其基因组大小大致相同;RB69可被紫外线诱变,但不产生r突变体,而在T2、T4和T6中很容易观察到r突变体。T4中的自发诱变总体上不依赖于培养基,对温度的依赖性也很小,但在特定位点,突变率可能随温度升高而增加,也可能随温度降低而降低。与噬菌体S13不同,紫外线诱变不受铺板前在各种条件下孵育受照射颗粒的影响。