Manser T, Tumas-Brundage K M, Casson L P, Giusti A M, Hande S, Notidis E, Vora K A
Department of Microbiology and Immunology, Kimmel Cancer Institute, Thomas Jefferson Medical College, Philadelphia, PA 19107, USA.
Immunol Rev. 1998 Apr;162:183-96. doi: 10.1111/j.1600-065x.1998.tb01441.x.
Somatic hypermutation and selection of immunoglobulin (Ig) variable (V)-region genes, working in concert, appear to be essential for memory B-cell development in mammals. There has been substantial progress on the nature of the cis-acting DNA elements that regulate hypermutation. The data obtained suggest that the mechanisms of Ig gene hypermutation and transcription are intimately intertwined. While it has long been appreciated that stringent phenotypic selection forces are imposed on the somatically mutated Ig V regions generated during a T-cell dependent B-cell response, the mechanisms involved in this selection have remained enigmatic. Our studies have questioned the role of foreign antigen deposited on follicular dendritic cells in affinity-based positive selection of V regions, and have shown that this selection takes place in a "clone-autonomous" fashion. In addition, our data strongly suggest that affinity for antigen alone is not the driving force for selection of B-cell clones into the memory compartment. In contrast, we suggest that a combination of positive selection for increased foreign antigen binding, and negative selection of antibody V regions that are autoreactive at the onset of the response, or have acquired autoreactivity via hypermutation, results in the "specificity maturation" of the memory B-cell response.
体细胞高频突变与免疫球蛋白(Ig)可变(V)区基因的选择协同作用,似乎对哺乳动物记忆B细胞的发育至关重要。在调控高频突变的顺式作用DNA元件的性质方面已取得了重大进展。所获得的数据表明,Ig基因高频突变和转录的机制紧密相连。长期以来人们一直认识到,在T细胞依赖性B细胞应答过程中产生的体细胞突变Ig V区会受到严格的表型选择压力,但这种选择所涉及的机制仍然不明。我们的研究对沉积在滤泡树突状细胞上的外来抗原在基于亲和力的V区阳性选择中的作用提出了质疑,并表明这种选择是以“克隆自主”的方式进行的。此外,我们的数据强烈表明,仅对抗原的亲和力并非将B细胞克隆选择进入记忆库的驱动力。相反,我们认为,对外来抗原结合增加的阳性选择与对在应答开始时具有自身反应性或通过高频突变获得自身反应性的抗体V区的阴性选择相结合,导致了记忆B细胞应答的“特异性成熟”。