Vora K A, Manser T
Department of Microbiology and Immunology, Thomas Jefferson Medical College, Philadelphia, Pennsylvania 19107.
J Exp Med. 1995 Jan 1;181(1):271-81. doi: 10.1084/jem.181.1.271.
Antibody VH transgenes containing small amounts of natural 5' and 3' flanking DNA undergo nonreciprocal homologous recombination with the endogenous Igh locus in B cells. The resulting "hybrid" heavy chain loci are generated at a low frequency but are fully functional, undergoing somatic hypermutation and isotype class switching. We have used this recombination pathway to introduce a somatically mutated variable (V) region with an unusually high affinity for the hapten p-azophenylarsonate (Ars) into the preimmune antibody repertoire. The affinity of this V region for Ars is 100-fold higher than any unmutated anti-Ars antibody previously characterized. Expression of the transgene-encoded V region did not affect many aspects of antigen-driven B cell differentiation, including somatic hypermutation, in either Ars-specific transgene- or endogenous V gene-expressing clones. Thus, the regulation of these processes appears to operate in a "global" fashion, in that the mechanisms involved are imperceptive of the relative affinities for antigen of the antibodies expressed by B cell clones participating in the immune response. In contrast, the selection of V region mutants leading to affinity maturation and memory cell formation was found to be strongly influenced by the transgenic V region, but only in clones expressing this V region. Hybridomas derived from transgene- and endogenous V region-expressing memory cells were isolated at similar frequencies from individual transgenic mice. The V regions expressed by hybridomas in both of these groups had 2- to 30-fold greater affinity for Ars than their unmutated precursors, despite the fact that the transgene-encoded precursors had 100-fold higher affinity than their endogenous counterparts. These results show that the criterion for entry into the memory compartment is established not by the affinity of a B cell's V region relative to all other V regions expressed during the response, but by the affinity of this V region relative to its unmutated precursor. Thus, the development of B cell memory is regulated in a "clone-autonomous" fashion.
含有少量天然5'和3'侧翼DNA的抗体VH转基因在B细胞中与内源性Igh基因座进行非互惠同源重组。产生的“杂交”重链基因座以低频率产生,但功能完全正常,经历体细胞超突变和同种型类别转换。我们利用这种重组途径将对半抗原对氨基苯砷酸(Ars)具有异常高亲和力的体细胞突变可变(V)区引入免疫前抗体库。该V区对Ars的亲和力比先前表征的任何未突变抗Ars抗体高100倍。在表达Ars特异性转基因或内源性V基因的克隆中,转基因编码的V区的表达均不影响抗原驱动的B细胞分化的许多方面,包括体细胞超突变。因此,这些过程的调节似乎以“全局”方式运作,因为所涉及的机制无法感知参与免疫反应的B细胞克隆所表达抗体对抗原的相对亲和力。相比之下,发现导致亲和力成熟和记忆细胞形成的V区突变体的选择受到转基因V区的强烈影响,但仅在表达该V区的克隆中如此。从单个转基因小鼠中以相似的频率分离出来自表达转基因和内源性V区的记忆细胞的杂交瘤。尽管转基因编码的前体比其内源性对应物具有高100倍的亲和力,但这两组杂交瘤表达的V区对Ars的亲和力比其未突变的前体高2至30倍。这些结果表明,进入记忆区室的标准不是由B细胞V区相对于反应期间表达的所有其他V区的亲和力确定的,而是由该V区相对于其未突变前体的亲和力确定的。因此,B细胞记忆的发育以“克隆自主”方式受到调节。