Gun'ko VM, Zarko VI, Turov VV, Leboda R, Chibowski E, Gun'ko VV
Institute of Surface Chemistry, 31 Prospect Nauki, Kiev, 252022, Ukraine
J Colloid Interface Sci. 1998 Sep 1;205(1):106-20. doi: 10.1006/jcis.1998.5626.
Highly disperse germania has been synthesized on the surface of fumed silica by the chemical vapor deposition (CVD) technique. Aqueous suspensions both of unmodified fumed silica and of the obtained germania/silica (GS) samples have been studied by electrophoresis, photon correlation spectroscopy, nuclear magnetic resonance (1H NMR), and quantum chemical semiempirical AM1-SM1 methods. For suspensions of GS samples, electrophoretic mobility, isoelectric point (IEP), particle size distribution, average effective diameter (Def), and free energy changes (DeltaG) of interfacial water were found to depend nonlinearly on the concentration of germania (CGeO2). At small concentrations, the structure of the synthesized germania is clustered rather than layered. For the last samples, maximum reduction of the free energy for interfacial water and larger values of IEP and Def in comparison with GS at high CGeO2 or unmodified silica have been observed. In suspensions, the particle size distributions for silica and GS are uni-, bi-, and trimodal and depend on pH and CGeO2. Values of polydispersity (P) are very rarely smaller than 0.05 and are usually between 0.25 and 0.70, which points to the wide size distribution. The solvation energy of the charged and uncharged GS clusters calculated by AM1-SM1 method decreases with increasing germania concentration. Copyright 1998 Academic Press.
通过化学气相沉积(CVD)技术在气相二氧化硅表面合成了高度分散的氧化锗。采用电泳、光子相关光谱、核磁共振(1H NMR)以及量子化学半经验AM1 - SM1方法对未改性气相二氧化硅和所得氧化锗/二氧化硅(GS)样品的水悬浮液进行了研究。对于GS样品悬浮液,发现界面水的电泳迁移率、等电点(IEP)、粒径分布、平均有效直径(Def)和自由能变化(ΔG)非线性地依赖于氧化锗的浓度(CGeO2)。在低浓度时,合成的氧化锗结构呈簇状而非层状。对于最后这些样品,观察到与高CGeO2下的GS或未改性二氧化硅相比,界面水的自由能最大程度降低,且IEP和Def值更大。在悬浮液中,二氧化硅和GS的粒径分布为单峰、双峰和三峰,且依赖于pH值和CGeO2。多分散性(P)值很少小于0.05,通常在0.25至0.70之间,这表明粒径分布较宽。通过AM1 - SM1方法计算的带电和不带电GS簇的溶剂化能随氧化锗浓度的增加而降低。版权所有1998年学术出版社。