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经抛光处理的树脂-牙本质界面微观形貌的变化。

Changes in microtopography across polished resin-dentin interfaces.

作者信息

Harada N, Inokoshi S, Tagami J

机构信息

Department of Operative Dentistry, Faculty of Dentistry, Tokyo Medical and Dental University, Japan.

出版信息

Am J Dent. 1998 Jun;11(3):137-42.

PMID:9823077
Abstract

PURPOSE

To investigate the resistance of the hybrid layer to polishing and argon-ion etching by measuring the microprofile along the resin-dentin interface.

MATERIALS AND METHODS

Mid-coronal human dentin disks were treated with one of three commercially available dentin bonding systems (All-Bond 2, Clearfil Liner Bond II, Scotchbond Multi-Purpose Plus), and bonded together so as to prepare three pairs of specimens. The bonded assemblies were sectioned perpendicular to the adhesive interface and embedded in epoxy resin. The polished interfaces were argon-ion etched through a grid square mesh placed on the interface. A profile of the hybrid layer in the ion-etched and non-etched areas was taken using a surface analyzing scanning electron microscope.

RESULTS

The normal mineralized dentin showed no reduction after argon-ion etching. The hybrid layer was reduced more than the adhesive resins during argon-ion etching. Reduction of the hybrid layer by argon-ion etching was greater with phosphoric acid-treated groups than with a self-etching-treated group (P < 0.05). The surface profiles of the non-etched, polished hybrid layer showed a slight concavity, with the deepest point in the middle of the hybrid layer. Argon-ion etching created non-uniform reduction of the hybrid layer, producing the deepest point close to the top of the hybrid layer in all systems.

摘要

目的

通过测量沿树脂-牙本质界面的微观轮廓,研究混合层对抛光和氩离子蚀刻的耐受性。

材料与方法

用人牙中冠部牙本质盘,采用三种市售牙本质粘结系统(全粘结2型、Clearfil Liner Bond II、Scotchbond多用途加强型)之一进行处理,然后粘结在一起,制备三对标本。将粘结组件垂直于粘结界面切片,嵌入环氧树脂中。通过放置在界面上的网格正方形网对抛光后的界面进行氩离子蚀刻。使用表面分析扫描电子显微镜获取离子蚀刻和未蚀刻区域中混合层的轮廓。

结果

正常矿化牙本质在氩离子蚀刻后无减少。在氩离子蚀刻过程中,混合层比粘结树脂减少得更多。磷酸处理组的混合层经氩离子蚀刻后的减少程度大于自酸蚀处理组(P < 0.05)。未蚀刻、抛光后的混合层表面轮廓呈轻微凹陷,最深点位于混合层中部。氩离子蚀刻使混合层产生不均匀减少,在所有系统中,最深点均靠近混合层顶部。

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