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Effect of nonparabolicity in GaAs/Ga1-xAlxAs semiconductor quantum wells.

作者信息

Yoo KH, Ram-Mohan LR, Nelson DF

出版信息

Phys Rev B Condens Matter. 1989 Jun 15;39(17):12808-12813. doi: 10.1103/physrevb.39.12808.

DOI:10.1103/physrevb.39.12808
PMID:9948154
Abstract
摘要

相似文献

1
Effect of nonparabolicity in GaAs/Ga1-xAlxAs semiconductor quantum wells.
Phys Rev B Condens Matter. 1989 Jun 15;39(17):12808-12813. doi: 10.1103/physrevb.39.12808.
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Effect of image forces on the binding energies of impurity atoms in Ga1-xAlxAs/GaAs/Ga1-xAlxAs quantum wells.
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Momentum-mixing-induced enhancement of band nonparabolicity in GaAs-Ga1-xAlxAs superlattices.动量混合诱导的GaAs-Ga1-xAlxAs超晶格中能带非抛物线性增强
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