• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

Population process of the upper subband in AlxGa1-xAs-GaAs quantum wells.

作者信息

Ensslin K, Heitmann D, Gerhardts RR, Ploog K

出版信息

Phys Rev B Condens Matter. 1989 Jun 15;39(17):12993-12996. doi: 10.1103/physrevb.39.12993.

DOI:10.1103/physrevb.39.12993
PMID:9948192
Abstract
摘要

相似文献

1
Population process of the upper subband in AlxGa1-xAs-GaAs quantum wells.AlxGa1-xAs-GaAs量子阱中上层子带的粒子数过程
Phys Rev B Condens Matter. 1989 Jun 15;39(17):12993-12996. doi: 10.1103/physrevb.39.12993.
2
Subband structures of GaAs/AlxGa1-xAs multiple quantum wells.砷化镓/铝镓砷多量子阱的子带结构
Phys Rev B Condens Matter. 1989 Oct 15;40(12):8349-8356. doi: 10.1103/physrevb.40.8349.
3
Hole subband states of GaAs/AlxGa1-xAs quantum wells within the 6 x 6 Luttinger model.6×6 卢廷格模型中 GaAs/AlxGa1-xAs 量子阱的空穴子带态
Phys Rev B Condens Matter. 1994 Sep 15;50(12):8493-8501. doi: 10.1103/physrevb.50.8493.
4
Consequences of subband nonparabolicity on intersubband excitations in p-doped GaAs/AlxGa1-xAs quantum wells.p型掺杂GaAs/AlxGa1-xAs量子阱中子带非抛物性对量子阱间激发的影响
Phys Rev B Condens Matter. 1993 Apr 15;47(15):9706-9709. doi: 10.1103/physrevb.47.9706.
5
Effect of a magnetic field on the photoluminescence from InxGa1-xAs/GaAs and GaAs/AlxGa1-xAs quantum wells.磁场对InxGa1-xAs/GaAs和GaAs/AlxGa1-xAs量子阱光致发光的影响。
Phys Rev B Condens Matter. 1991 Feb 15;43(5):4244-4248. doi: 10.1103/physrevb.43.4244.
6
Valence-subband structures of GaAs/AlxGa1-xAs quantum wires: The effect of split-off bands.GaAs/AlxGa1-xAs量子线的价带子带结构:分裂带的影响。
Phys Rev B Condens Matter. 1989 Sep 15;40(8):5507-5514. doi: 10.1103/physrevb.40.5507.
7
Strong interaction of Fermi-edge singularity and exciton related to N=2 subband in a modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs quantum well.
Phys Rev B Condens Matter. 1996 Dec 15;54(24):17701-17704. doi: 10.1103/physrevb.54.17701.
8
Analytic solutions for the valence subband mixing at the zone center of a GaAs/AlxGa1-xAs quantum well under uniaxial stress perpendicular to the growth direction.在垂直于生长方向的单轴应力作用下,GaAs/AlxGa1-xAs量子阱区中心价带子带混合的解析解。
Phys Rev B Condens Matter. 1996 Aug 15;54(8):5700-5711. doi: 10.1103/physrevb.54.5700.
9
Carrier-carrier scattering: An experimental comparison of bulk GaAs and GaAs/AlxGa1-xAs quantum wells.载流子-载流子散射:体相砷化镓与砷化镓/铝镓砷量子阱的实验比较。
Phys Rev B Condens Matter. 1993 Dec 15;48(24):18336-18339. doi: 10.1103/physrevb.48.18336.
10
Resonant electron-optical-phonon interactions for impurities in GaAs and GaAs/AlxGa1-xAs quantum wells and superlattices.砷化镓以及砷化镓/铝镓砷量子阱和超晶格中杂质的共振电子-光学声子相互作用
Phys Rev B Condens Matter. 1993 Dec 15;48(23):17243-17254. doi: 10.1103/physrevb.48.17243.