Effective-mass theory for GaAs/Ga1-xAlxAs quantum wires and corrugated superlattices grown on (311)-oriented substrates.
作者信息
Li SS, Xia JB
出版信息
Phys Rev B Condens Matter. 1994 Sep 15;50(12):8602-8608. doi: 10.1103/physrevb.50.8602.
PMID:9974879
Abstract
摘要
相似文献
1
Effective-mass theory for GaAs/Ga1-xAlxAs quantum wires and corrugated superlattices grown on (311)-oriented substrates.用于生长在（311）取向衬底上的GaAs/Ga1-xAlxAs量子线和波纹超晶格的有效质量理论。
Phys Rev B Condens Matter. 1994 Sep 15;50(12):8602-8608. doi: 10.1103/physrevb.50.8602.
2
Exciton states in the GaAs/Ga1-xAlxAs corrugated superlattices grown on (311)-oriented substrates.
Phys Rev B Condens Matter. 1995 Jun 15;51(23):17203-17206. doi: 10.1103/physrevb.51.17203.
3
Electronic structure of GaAs-Ga1-xAlxAs quantum well and sawtooth superlattices.
Phys Rev B Condens Matter. 1985 Jan 15;31(2):1205-1207. doi: 10.1103/physrevb.31.1205.
4
Confined electron states in GaAs-Ga1-xAlxAs quantum wires.
Phys Rev B Condens Matter. 1987 Feb 15;35(5):2463-2466. doi: 10.1103/physrevb.35.2463.
5
Photoluminescence study of shallow acceptors in GaAs-Ga1-xAlxAs cylindrical quantum-well wires.
Phys Rev B Condens Matter. 1992 Mar 15;45(12):6742-6746. doi: 10.1103/physrevb.45.6742.
6
Self-consistent electronic-structure calculation of rectangular modulation-doped GaAs/Ga1-xAlxAs quantum wires.
Phys Rev B Condens Matter. 1994 Sep 15;50(11):7680-7688. doi: 10.1103/physrevb.50.7680.
7
Dielectric response to a donor ion in a Ga1-xAlxAs-GaAs-Ga1-xAlxAs quantum well of infinite depth.
Phys Rev B Condens Matter. 1985 Nov 15;32(10):6498-6502. doi: 10.1103/physrevb.32.6498.
8
Carrier confinement potential in quantum-well wires fabricated by implantation-enhanced interdiffusion in the GaAs-Ga1-xAlxAs system.
Phys Rev B Condens Matter. 1987 Aug 15;36(6):3243-3246. doi: 10.1103/physrevb.36.3243.
9
Effect of image forces on the binding energies of impurity atoms in Ga1-xAlxAs/GaAs/Ga1-xAlxAs quantum wells.
Phys Rev B Condens Matter. 1992 Jul 15;46(4):2621-2624. doi: 10.1103/physrevb.46.2621.
10
Sensitivity of the absorption edge to applied electric fields in GaAs-Ga1-xAlxAs superlattices.
Phys Rev B Condens Matter. 1988 Jul 15;38(2):1251-1254. doi: 10.1103/physrevb.38.1251.
引用本文的文献
1
InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications.用于超辐射发光二极管应用的在高折射率表面上生长的 InGaAs 量子阱。
Nanoscale Res Lett. 2010 Apr 22;5(6):1079-84. doi: 10.1007/s11671-010-9605-2.
Zotero 插件