Comment on "Many-body analysis of the effects of electron density and temperature on the intersubband transition in GaAs/AlxGa1-xAs multiple quantum wells".
作者信息
Zaluzny M
出版信息
Phys Rev B Condens Matter. 1996 Oct 15;54(15):10978-10979. doi: 10.1103/physrevb.54.10978.
PMID:9984897
Abstract
摘要
相似文献
1
Comment on "Many-body analysis of the effects of electron density and temperature on the intersubband transition in GaAs/AlxGa1-xAs multiple quantum wells".
Phys Rev B Condens Matter. 1996 Oct 15;54(15):10978-10979. doi: 10.1103/physrevb.54.10978.
2
Reply to "Comment on 'Many-body analysis of the effects of electron density and temperature on the intersubband transition in GaAs/AlxGa1-xAs multiple quantum wells"'.
Phys Rev B Condens Matter. 1996 Oct 15;54(15):10980-10981. doi: 10.1103/physrevb.54.10980.
3
Many-body analysis of the effects of electron density and temperature on the intersubband transition in GaAs/AlxGa1-xAs multiple quantum wells.
Phys Rev B Condens Matter. 1995 Nov 15;52(19):14126-14130. doi: 10.1103/physrevb.52.14126.
4
Influence of electron temperature and carrier concentration on electron-LO-phonon intersubband scattering in wide GaAs/AlxGa1-xAs quantum wells.
Phys Rev B Condens Matter. 1995 Jul 15;52(3):1874-1881. doi: 10.1103/physrevb.52.1874.
5
Absorption saturation of intersubband optical transitions in GaAs/AlxGa1-xAs multiple quantum wells.
Phys Rev B Condens Matter. 1993 Mar 15;47(11):6755-6757. doi: 10.1103/physrevb.47.6755.
6
Consequences of subband nonparabolicity on intersubband excitations in p-doped GaAs/AlxGa1-xAs quantum wells.
Phys Rev B Condens Matter. 1993 Apr 15;47(15):9706-9709. doi: 10.1103/physrevb.47.9706.
7
Monte Carlo simulation of intersubband relaxation in wide, uniformly doped GaAs/AlxGa1-xAs quantum wells.
Phys Rev B Condens Matter. 1996 Dec 15;54(24):17794-17804. doi: 10.1103/physrevb.54.17794.
8
Femtosecond luminescence measurements of the intersubband scattering rate in AlxGa1-xAs/GaAs quantum wells under selective excitation.
Phys Rev B Condens Matter. 1996 Nov 15;54(20):R14269-R14272. doi: 10.1103/physrevb.54.r14269.
9
Thermally activated intersubband and hopping transport in center-doped p-type GaAs/AlxGa1-xAs quantum wells.
Phys Rev B Condens Matter. 1996 Jan 15;53(3):1357-1361. doi: 10.1103/physrevb.53.1357.
10
Electron-electron interaction and intersubband absorption coefficient in a GaAs/AlxGa1-xAs quantum well.
Phys Rev B Condens Matter. 1992 Nov 15;46(20):13351-13356. doi: 10.1103/physrevb.46.13351.
Zotero 插件