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Individual-defect electromigration in metal nanobridges.

作者信息

Ralls KS, Ralph DC, Buhrman RA

出版信息

Phys Rev B Condens Matter. 1989 Dec 15;40(17):11561-11570. doi: 10.1103/physrevb.40.11561.

DOI:10.1103/physrevb.40.11561

PMID:9991754

Abstract

摘要

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Individual-defect electromigration in metal nanobridges.

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引用本文的文献

Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps.

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相似文献

Individual-defect electromigration in metal nanobridges.

Phys Rev B Condens Matter. 1989 Dec 15;40(17):11561-11570. doi: 10.1103/physrevb.40.11561.

In situ visualisation of electromigration in Pt nanobridges at elevated temperatures.

Ultramicroscopy. 2015 Nov;158:74-80. doi: 10.1016/j.ultramic.2015.06.017. Epub 2015 Jul 11.

The use of STEM imaging to analyze thickness variations due to electromigration-induced mass transport in thin polycrystalline nanobridges.

Ultramicroscopy. 2013 Nov;134:155-9. doi: 10.1016/j.ultramic.2013.05.022. Epub 2013 Jun 8.

In situ TEM and STEM studies of reversible electromigration in thin palladium-platinum bridges.

Nanotechnology. 2013 Dec 20;24(50):505708. doi: 10.1088/0957-4484/24/50/505708. Epub 2013 Nov 22.

Structure and local charging of electromigrated Au nanocontacts.

Nanotechnology. 2017 Feb 3;28(5):055206. doi: 10.1088/1361-6528/28/5/055206. Epub 2016 Dec 29.

Aqueous electromigration of single-walled carbon nanotubes and co-electromigration with copper ions.

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Phys Rev B Condens Matter. 1991 Sep 15;44(11):5800-5817. doi: 10.1103/physrevb.44.5800.

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Phys Rev B Condens Matter. 1992 Apr 15;45(16):9311-9319. doi: 10.1103/physrevb.45.9311.

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ACS Appl Mater Interfaces. 2013 Dec 26;5(24):12869-75. doi: 10.1021/am403115m. Epub 2013 Dec 4.

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Nanotechnology. 2008 Apr 9;19(14):145709. doi: 10.1088/0957-4484/19/14/145709. Epub 2008 Mar 5.

引用本文的文献

Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps.

Sci Rep. 2016 Oct 11;6:34961. doi: 10.1038/srep34961.

Enhanced noise at high bias in atomic-scale Au break junctions.

Sci Rep. 2014 Feb 27;4:4221. doi: 10.1038/srep04221.

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