Binding energies of excited shallow acceptor states in GaAs/Ga1-xAlxAs quantum wells.
作者信息
Pasquarello A, Andreani LC, Buczko R
出版信息
Phys Rev B Condens Matter. 1989 Sep 15;40(8):5602-5612. doi: 10.1103/physrevb.40.5602.
PMID:9992596
Abstract
摘要
相似文献
1
Binding energies of excited shallow acceptor states in GaAs/Ga1-xAlxAs quantum wells.GaAs/Ga1-xAlxAs量子阱中受激浅受主态的结合能
Phys Rev B Condens Matter. 1989 Sep 15;40(8):5602-5612. doi: 10.1103/physrevb.40.5602.
2
Binding energies of ground and excited states of shallow acceptors in GaAs/Ga1-xAlxAs quantum wells.GaAs/Ga1-xAlxAs量子阱中浅受主基态和激发态的结合能。
Phys Rev B Condens Matter. 1990 Sep 15;42(8):5349-5352. doi: 10.1103/physrevb.42.5349.
3
Infrared transitions between shallow acceptor states in GaAs-Ga1-xAlxAs quantum wells.GaAs-Ga1-xAlxAs量子阱中浅受主态之间的红外跃迁。
Phys Rev B Condens Matter. 1991 Jul 15;44(3):1118-1127. doi: 10.1103/physrevb.44.1118.
4
Effect of image forces on the binding energies of impurity atoms in Ga1-xAlxAs/GaAs/Ga1-xAlxAs quantum wells.
Phys Rev B Condens Matter. 1992 Jul 15;46(4):2621-2624. doi: 10.1103/physrevb.46.2621.
5
Spatially dependent screening calculation of binding energies of hydrogenic impurity states in GaAs-Ga1-xAlxAs quantum wells.GaAs-Ga1-xAlxAs量子阱中类氢杂质态结合能的空间相关筛选计算
Phys Rev B Condens Matter. 1988 Nov 15;38(15):10641-10644. doi: 10.1103/physrevb.38.10641.
6
Electric field dependence of the binding energy of shallow donors in GaAs-Ga1-xAlxAs quantum wells.GaAs-Ga1-xAlxAs量子阱中浅施主结合能的电场依赖性
Phys Rev B Condens Matter. 1985 Aug 15;32(4):2378-2381. doi: 10.1103/physrevb.32.2378.
7
Effects of dielectric mismatch on the impurity binding energies in GaAs-Ga1-xAlxAs quantum wells.介电失配对GaAs-Ga1-xAlxAs量子阱中杂质束缚能的影响。
Phys Rev B Condens Matter. 1994 Aug 15;50(8):5732-5735. doi: 10.1103/physrevb.50.5732.
8
Room-temperature emission of highly excited GaAs/Ga1-xAlxAs quantum wells.高激发态砷化镓/镓铝砷量子阱的室温发射
Phys Rev B Condens Matter. 1990 Sep 15;42(8):5395-5398. doi: 10.1103/physrevb.42.5395.
9
Acceptor-related photoluminescence study in GaAs/Ga1-xAlxAs quantum wells.
Phys Rev B Condens Matter. 1990 Feb 15;41(6):3719-3727. doi: 10.1103/physrevb.41.3719.
10
Intersubband carrier relaxation in highly excited GaAs/Ga1-xAlxAs multiple quantum wells.高激发GaAs/Ga1-xAlxAs多量子阱中的子带间载流子弛豫
Phys Rev B Condens Matter. 1990 Feb 15;41(6):3688-3694. doi: 10.1103/physrevb.41.3688.
Zotero 插件