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Resonant tunneling through one- and zero-dimensional states constricted by AlxGa1-xAs/GaAs/AlxGa1-xAs heterojunctions and high-resistance regions induced by focused Ga ion-beam implanation.

作者信息

Tarucha S, Hirayama Y, Saku T, Kimura T

出版信息

Phys Rev B Condens Matter. 1990 Mar 15;41(8):5459-5462. doi: 10.1103/physrevb.41.5459.

DOI:10.1103/physrevb.41.5459
PMID:9994423
Abstract
摘要

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