• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

Exciton binding energy in GaAs/AlxGa1-xAs multiple quantum wells.

作者信息

Fu Y, Chao KA

出版信息

Phys Rev B Condens Matter. 1991 May 15;43(15):12626-12629. doi: 10.1103/physrevb.43.12626.

DOI:10.1103/physrevb.43.12626
PMID:9997068
Abstract
摘要

相似文献

1
Exciton binding energy in GaAs/AlxGa1-xAs multiple quantum wells.GaAs/AlxGa1-xAs多量子阱中的激子束缚能。
Phys Rev B Condens Matter. 1991 May 15;43(15):12626-12629. doi: 10.1103/physrevb.43.12626.
2
Electric field dependence of the exciton binding energy in GaAs/AlxGa1-xAs quantum wells.GaAs/AlxGa1-xAs量子阱中激子束缚能与电场的关系
Phys Rev B Condens Matter. 1988 May 15;37(15):9087-9088. doi: 10.1103/physrevb.37.9087.
3
Effect of charge-carrier screening on the exciton binding energy in GaAs/AlxGa1-xAs quantum wells.载流子屏蔽对GaAs/AlxGa1-xAs量子阱中激子结合能的影响。
Phys Rev B Condens Matter. 1993 Jan 15;47(4):2101-2106. doi: 10.1103/physrevb.47.2101.
4
Reduced binding energy of the symmetric heavy-hole exciton in GaAs/AlxGa1-xAs symmetric coupled double quantum wells.GaAs/AlxGa1-xAs对称耦合双量子阱中对称重空穴激子结合能的降低
Phys Rev B Condens Matter. 1992 Nov 15;46(19):12853-12856. doi: 10.1103/physrevb.46.12853.
5
Comparison of 1s-2s exciton-energy splittings between (001) and (111) GaAs/AlxGa1-xAs quantum wells.(001)和(111) GaAs/AlxGa1-xAs量子阱之间1s-2s激子能量分裂的比较。
Phys Rev B Condens Matter. 1993 Sep 15;48(11):7935-7939. doi: 10.1103/physrevb.48.7935.
6
Dynamics of exciton transfer between the bound and the continuum states in GaAs-AlxGa1-xAs multiple quantum wells.砷化镓-铝镓砷多量子阱中束缚态与连续态之间激子转移的动力学
Phys Rev B Condens Matter. 1990 Jun 15;41(18):12949-12952. doi: 10.1103/physrevb.41.12949.
7
Dispersion of nonlinear optical susceptibility of GaAs/AlxGa1-xAs multiple quantum wells in the exciton region.GaAs/AlxGa1-xAs多量子阱在激子区域的非线性光学极化率色散
Phys Rev B Condens Matter. 1990 Sep 15;42(8):5117-5119. doi: 10.1103/physrevb.42.5117.
8
Well-width and aluminum-concentration dependence of the exciton binding energies in GaAs/AlxGa1-xAs quantum wells.GaAs/AlxGa1-xAs量子阱中激子结合能的阱宽和铝浓度依赖性
Phys Rev B Condens Matter. 1993 Jun 15;47(23):15755-15762. doi: 10.1103/physrevb.47.15755.
9
Resonant Raman scattering by acceptors in GaAs/AlxGa1-xAs multiple quantum wells: A probe of exciton localization.
Phys Rev B Condens Matter. 1990 Dec 15;42(17):11035-11041. doi: 10.1103/physrevb.42.11035.
10
Free-to-bound and light- and heavy-hole bound-exciton transitions in AlxGa1-xAs-GaAs multiple quantum wells.AlxGa1-xAs-GaAs多量子阱中自由到束缚以及轻、重空穴束缚激子跃迁
Phys Rev B Condens Matter. 1991 Jan 15;43(2):1604-1609. doi: 10.1103/physrevb.43.1604.