Temperature-dependent changes on the sulfur-passivated GaAs (111)A, (100), and (111)B surfaces.

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作者信息

Scimeca T, Muramatsu Y, Oshima M, Oigawa H, Nannichi Y

出版信息

Phys Rev B Condens Matter. 1991 Dec 15;44(23):12927-12932. doi: 10.1103/physrevb.44.12927.

DOI:10.1103/physrevb.44.12927

PMID:9999474

Abstract

摘要

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Temperature-dependent changes on the sulfur-passivated GaAs (111)A, (100), and (111)B surfaces.

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引用本文的文献

Atomic structure and passivated nature of the Se-treated GaAs(111)B surface.

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相似文献

Temperature-dependent changes on the sulfur-passivated GaAs (111)A, (100), and (111)B surfaces.

Phys Rev B Condens Matter. 1991 Dec 15;44(23):12927-12932. doi: 10.1103/physrevb.44.12927.

Surface-structure analysis of sulfur-passivated GaAs(111)A and GaAs(111)B by x-ray standing-wave triangulation.

Phys Rev B Condens Matter. 1993 Oct 15;48(15):11037-11042. doi: 10.1103/physrevb.48.11037.

Structure of the sulfur-passivated GaAs(001) surface.

Phys Rev B Condens Matter. 1994 Aug 15;50(7):4905-4908. doi: 10.1103/physrevb.50.4905.

In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: electronic and electric structures.

Nanotechnology. 2015 Apr 24;26(16):164001. doi: 10.1088/0957-4484/26/16/164001. Epub 2015 Mar 31.

First-principles pseudopotential calculations of passivated GaAs(001) surfaces.

Phys Rev B Condens Matter. 1996 Dec 15;54(24):17661-17666. doi: 10.1103/physrevb.54.17661.

Passivation of GaAs nanocrystals by chemical functionalization.

J Am Chem Soc. 2008 Jan 23;130(3):955-64. doi: 10.1021/ja076034p. Epub 2008 Jan 3.

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Nanotechnology. 2011 Jun 10;22(23):235704. doi: 10.1088/0957-4484/22/23/235704. Epub 2011 Apr 14.

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Nanotechnology. 2019 May 24;30(21):215703. doi: 10.1088/1361-6528/ab062e. Epub 2019 Mar 15.

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Sci Rep. 2018 Jan 19;8(1):1220. doi: 10.1038/s41598-018-19560-2.

引用本文的文献

Atomic structure and passivated nature of the Se-treated GaAs(111)B surface.

Sci Rep. 2018 Jan 19;8(1):1220. doi: 10.1038/s41598-018-19560-2.