• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

Oscillatory behavior of the continuum states in InxGa1-xAs/GaAs quantum wells due to capping-barrier layers of finite size.

作者信息

Fafard S, Fortin E, Roth AP

出版信息

Phys Rev B Condens Matter. 1992 Jun 15;45(23):13769-13772. doi: 10.1103/physrevb.45.13769.

DOI:10.1103/physrevb.45.13769
PMID:10001481
Abstract
摘要

相似文献

1
Oscillatory behavior of the continuum states in InxGa1-xAs/GaAs quantum wells due to capping-barrier layers of finite size.由于有限尺寸的覆盖势垒层导致InxGa1-xAs/GaAs量子阱中连续态的振荡行为。
Phys Rev B Condens Matter. 1992 Jun 15;45(23):13769-13772. doi: 10.1103/physrevb.45.13769.
2
Effects of an electric field on the continuum energy levels in InxGa1-xAs/GaAs quantum wells terminated with thin cap layers.
Phys Rev B Condens Matter. 1993 Apr 15;47(16):10588-10595. doi: 10.1103/physrevb.47.10588.
3
Direct observation of above-barrier quasibound states in InxGa1-xAs/AlAs/GaAs quantum wells.
Phys Rev B Condens Matter. 1996 Jul 15;54(3):1541-1544. doi: 10.1103/physrevb.54.1541.
4
Direct coupling of heavy-hole free excitons in InxGa1-xAs/GaAs quantum wells with free excitons in the GaAs barrier.InxGa1-xAs/GaAs量子阱中的重空穴自由激子与GaAs势垒中的自由激子的直接耦合。
Phys Rev B Condens Matter. 1991 Jan 15;43(2):1871-1874. doi: 10.1103/physrevb.43.1871.
5
Energy levels in quantum wells with capping barrier layer of finite size: Bound states and oscillatory behavior of the continuum states.
Phys Rev B Condens Matter. 1992 Aug 15;46(8):4659-4666. doi: 10.1103/physrevb.46.4659.
6
Effect of a magnetic field on the photoluminescence from InxGa1-xAs/GaAs and GaAs/AlxGa1-xAs quantum wells.磁场对InxGa1-xAs/GaAs和GaAs/AlxGa1-xAs量子阱光致发光的影响。
Phys Rev B Condens Matter. 1991 Feb 15;43(5):4244-4248. doi: 10.1103/physrevb.43.4244.
7
Influence of barrier height on carrier dynamics in strained InxGa1-xAs/GaAs quantum wells.势垒高度对应变InxGa1-xAs/GaAs量子阱中载流子动力学的影响。
Phys Rev B Condens Matter. 1991 Apr 15;43(11):9312-9315. doi: 10.1103/physrevb.43.9312.
8
Binding energies and envelope functions of light-hole excitons in GaAs/InxGa1-xAs/GaAs strained quantum wells.GaAs/InxGa1-xAs/GaAs应变量子阱中轻空穴激子的束缚能和包络函数
Phys Rev B Condens Matter. 1996 Oct 15;54(15):10312-10315. doi: 10.1103/physrevb.54.10312.
9
Zeeman splitting of the excitonic recombination in InxGa1-xAs/GaAs single quantum wells.InxGa1-xAs/GaAs单量子阱中激子复合的塞曼分裂
Phys Rev B Condens Matter. 1994 Sep 15;50(12):8889-8892. doi: 10.1103/physrevb.50.8889.
10
Thermally activated carrier escape mechanisms from InxGa1-xAs/GaAs quantum wells.来自InxGa1-xAs/GaAs量子阱的热激活载流子逃逸机制。
Phys Rev B Condens Matter. 1994 Dec 15;50(24):18147-18152. doi: 10.1103/physrevb.50.18147.