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结构域III和IV中的电压传感器会因钠离子通道快速失活而固定,但结构域I和II中的电压传感器不会。

Voltage sensors in domains III and IV, but not I and II, are immobilized by Na+ channel fast inactivation.

作者信息

Cha A, Ruben P C, George A L, Fujimoto E, Bezanilla F

机构信息

Department of Physiology, University of California School of Medicine, Los Angeles 90095, USA.

出版信息

Neuron. 1999 Jan;22(1):73-87. doi: 10.1016/s0896-6273(00)80680-7.

DOI:10.1016/s0896-6273(00)80680-7
PMID:10027291
Abstract

Using site-directed fluorescent labeling, we examined conformational changes in the S4 segment of each domain of the human skeletal muscle sodium channel (hSkM1). The fluorescence signals from S4 segments in domains I and II follow activation and are unaffected as fast inactivation settles. In contrast, the fluorescence signals from S4 segments in domains III and IV show kinetic components during activation and deactivation that correlate with fast inactivation and charge immobilization. These results indicate that in hSkM1, the S4 segments in domains III and IV are responsible for voltage-sensitive conformational changes linked to fast inactivation and are immobilized by fast inactivation, while the S4 segments in domains I and II are unaffected by fast inactivation.

摘要

利用定点荧光标记技术,我们检测了人类骨骼肌钠通道(hSkM1)每个结构域的S4片段的构象变化。结构域I和II中S4片段的荧光信号随激活而变化,在快速失活稳定时不受影响。相比之下,结构域III和IV中S4片段的荧光信号在激活和失活过程中显示出与快速失活和电荷固定相关的动力学成分。这些结果表明,在hSkM1中,结构域III和IV中的S4片段负责与快速失活相关的电压敏感构象变化,并因快速失活而固定,而结构域I和II中的S4片段不受快速失活的影响。

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1
Voltage sensors in domains III and IV, but not I and II, are immobilized by Na+ channel fast inactivation.结构域III和IV中的电压传感器会因钠离子通道快速失活而固定,但结构域I和II中的电压传感器不会。
Neuron. 1999 Jan;22(1):73-87. doi: 10.1016/s0896-6273(00)80680-7.
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Tracking voltage-dependent conformational changes in skeletal muscle sodium channel during activation.追踪骨骼肌钠通道激活过程中电压依赖性构象变化。
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Differential effects of homologous S4 mutations in human skeletal muscle sodium channels on deactivation gating from open and inactivated states.人类骨骼肌钠通道中同源S4突变对从开放状态和失活状态去激活门控的不同影响。
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Movement of voltage sensor S4 in domain 4 is tightly coupled to sodium channel fast inactivation and gating charge immobilization.结构域4中电压传感器S4的移动与钠通道快速失活和门控电荷固定紧密耦合。
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Sodium channel activation gating is affected by substitutions of voltage sensor positive charges in all four domains.钠通道激活门控受所有四个结构域中电压感受器正电荷替代的影响。
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Sodium channel inactivation is altered by substitution of voltage sensor positive charges.电压感受器正电荷的替换会改变钠通道失活。
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