通过离子溅射形成有序纳米级半导体点

Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering.

作者信息

Facsko S, Dekorsy T, Koerdt C, Trappe C, Kurz H, Vogt A, Hartnagel HL

机构信息

Institute of Semiconductor Electronics, Rheinisch-Westfälische Technische Hochschule Aachen, Sommerfeldstrasse 24, 52074 Aachen, Germany. Institut für Hochfrequenztechnik, TU Darmstadt, Merckstrasse 25, 64283 Darmstadt, Germany.

出版信息

Science. 1999 Sep 3;285(5433):1551-1553. doi: 10.1126/science.285.5433.1551.

DOI:10.1126/science.285.5433.1551

PMID:10477516

Abstract

A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, which is based on the interplay between roughening induced by ion sputtering and smoothing due to surface diffusion.

摘要

提出了一种基于法向入射下离子溅射引起的表面不稳定性的半导体量子点形成过程。在锑化镓表面制备出了直径为35纳米且排列成规则六边形晶格的晶体点。形成机制依赖于表面侵蚀过程中发生的自然自组织机制，该机制基于离子溅射引起的粗糙度增加与表面扩散导致的平滑之间的相互作用。