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采用掠入射X射线散射技术研究半导体表面的离子诱导纳米图案。

Ion-induced nanopatterns on semiconductor surfaces investigated by grazing incidence x-ray scattering techniques.

作者信息

Carbone D, Biermanns A, Ziberi B, Frost F, Plantevin O, Pietsch U, Metzger T H

机构信息

ID01, ESRF, 6 rue Jules Horowitz, F-38043 Grenoble Cedex, France.

出版信息

J Phys Condens Matter. 2009 Jun 3;21(22):224007. doi: 10.1088/0953-8984/21/22/224007. Epub 2009 May 12.

DOI:10.1088/0953-8984/21/22/224007
PMID:21715746
Abstract

In this review we cover and describe the application of grazing incidence x-ray scattering techniques to study and characterize nanopattern formation on semiconductor surfaces by ion beam erosion under various conditions. It is demonstrated that x-rays under grazing incidence are especially well suited to characterize (sub)surface structures on the nanoscale with high spatial and statistical accuracy. The corresponding theory and data evaluation is described in the distorted wave Born approximation. Both ex situ and in situ studies are presented, performed with the use of a specially designed sputtering chamber which allows us to follow the temporal evolution of the nanostructure formation. Corresponding results show a general stabilization of the ordering wavelength and the extension of the ordering as a function of the ion energy and fluence as predicted by theory. The in situ measurements are especially suited to study the early stages of pattern formation, which in some cases reveal a transition from dot to ripple formation. For the case of medium energy ions crystalline ripples are formed buried under a semi-amorphous thick layer with a ripple structure at the surface being conformal with the crystalline/amorphous interface. Here, the x-ray techniques are especially advantageous since they are non-destructive and bulk-sensitive by their very nature. In addition, the GI x-ray techniques described in this review are a unique tool to study the evolving strain, a topic which remains to be explored both experimentally and theoretically.

摘要

在本综述中,我们涵盖并描述了掠入射X射线散射技术在研究和表征各种条件下离子束侵蚀半导体表面上纳米图案形成方面的应用。结果表明,掠入射X射线特别适合以高空间和统计精度表征纳米尺度的(亚)表面结构。相应的理论和数据评估在扭曲波玻恩近似中进行了描述。本文展示了原位和非原位研究,这些研究是使用专门设计的溅射室进行的,该溅射室使我们能够跟踪纳米结构形成的时间演变。相应结果表明,如理论所预测的,有序波长普遍稳定,且有序程度随离子能量和注量的增加而扩展。原位测量特别适合研究图案形成的早期阶段,在某些情况下,这揭示了从点形成到波纹形成的转变。对于中等能量离子的情况,会形成埋在半非晶厚层下的晶体波纹,表面的波纹结构与晶体/非晶界面共形。在这里,X射线技术特别有利,因为它们本质上是非破坏性的且对体敏感。此外,本综述中描述的掠入射X射线技术是研究不断演变的应变的独特工具,这一主题在实验和理论上仍有待探索。

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