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半胱氨酸取代对Shaker钾通道S4片段拓扑结构的影响:对门控分子模型的启示

Effect of cysteine substitutions on the topology of the S4 segment of the Shaker potassium channel: implications for molecular models of gating.

作者信息

Wang M H, Yusaf S P, Elliott D J, Wray D, Sivaprasadarao A

机构信息

School of Biomedical Sciences, University of Leeds, Leeds LS2 9JT, UK.

出版信息

J Physiol. 1999 Dec 1;521 Pt 2(Pt 2):315-26. doi: 10.1111/j.1469-7793.1999.00315.x.

Abstract
  1. The gating properties of voltage-gated potassium channels are largely determined by the amino acid sequence of their S4 segments. To investigate the nature of S4 movement during gating, we introduced single cysteines into the S4 segment of the Shaker potassium channel and expressed the mutants in Xenopus oocytes. We then measured the conductance-voltage (g-V) relationships and the rate and the voltage dependence of movement of the engineered cysteines, using p-chloromercuribenzene sulphonate (pCMBS) as a probe. 2. Mutation of charged residues at positions 362, 365 and 368, but not the uncharged residues (positions 360, 361, 363, 364 and 366), to cysteines shifted the g-V relationships to more positive potentials. Mutant channels in which cysteines replaced the charged residues at positions 362 and 365 (R362C and R365C) reacted faster with pCMBS than those in which cysteines were introduced in place of uncharged residues at positions 360 and 361 (I360C and L361C). Furthermore, the R365C mutant channel reacted with pCMBS even at hyperpolarised (-120 mV) potentials. Currents expressed by the doubly mutated R365S/V367C and R368S/V367C channels, but not the singly mutated V367C channel, were inhibited by pCMBS. Moreover, the R368C mutant channel was also affected by pCMBS. 3. Voltage dependence of block by pCMBS (2 min exposure) was steeper for L366C than for L361C and V363C mutant channels (effective charge 2.19, 1. 41 and 1.45, respectively). The voltage dependence of the pCMBS effect was also shifted to more depolarising potentials the deeper in the membrane the position of the residue mutated to cysteine (voltages for half-maximal effect -107, -94 and -73 mV for positions 361, 363 and 366, respectively). 4. Our data show firstly that charge-neutralising mutations in S4 alter the topology of this region such that the membrane-spanning portion of S4 is reduced. Secondly, our data for the other mutant channels suggest that S4 might move in at least two sequential steps, and can move up to its maximal limit even at the resting potential of the cell.
摘要
  1. 电压门控钾通道的门控特性很大程度上由其S4片段的氨基酸序列决定。为了研究门控过程中S4的移动性质,我们将单个半胱氨酸引入到Shaker钾通道的S4片段,并在非洲爪蟾卵母细胞中表达这些突变体。然后,我们使用对氯汞苯磺酸盐(pCMBS)作为探针,测量了电导-电压(g-V)关系以及工程化半胱氨酸的移动速率和电压依赖性。2. 将362、365和368位的带电荷残基突变为半胱氨酸,但未将不带电荷残基(360、361、363、364和366位)突变为半胱氨酸,会使g-V关系向更正的电位偏移。半胱氨酸取代362和365位带电荷残基的突变通道(R362C和R365C)与pCMBS的反应比半胱氨酸取代360和361位不带电荷残基的突变通道(I360C和L361C)更快。此外,R365C突变通道即使在超极化(-120 mV)电位下也能与pCMBS反应。双突变的R365S/V367C和R368S/V367C通道表达的电流,而不是单突变的V367C通道表达的电流,受到pCMBS的抑制。此外,R368C突变通道也受到pCMBS的影响。3. pCMBS(暴露2分钟)阻断的电压依赖性对于L366C突变通道比L361C和V363C突变通道更陡峭(有效电荷分别为2.19、1.41和1.45)。pCMBS效应的电压依赖性也随着突变为半胱氨酸的残基在膜内位置越深而向更去极化的电位偏移(361、363和366位的半最大效应电压分别为-107、-94和-73 mV)。4. 我们的数据首先表明,S4中的电荷中和突变改变了该区域的拓扑结构,使得S4的跨膜部分减少。其次,我们对其他突变通道的数据表明,S4可能至少以两个连续步骤移动,并且即使在细胞的静息电位下也能移动到其最大极限。

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本文引用的文献

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The moving parts of voltage-gated ion channels.电压门控离子通道的可移动部分。
Q Rev Biophys. 1998 Aug;31(3):239-95. doi: 10.1017/s0033583598003448.

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