Coenraads P J, Olie K, Tang N J
Occupational & Environmental Dermatology, University Hospital Groningen, PO Box 30001, 9700 RB Groningen, the Netherlands.
Br J Dermatol. 1999 Oct;141(4):694-7. doi: 10.1046/j.1365-2133.1999.03109.x.
Chloracne is caused by exposure to certain halogenated polycyclic hydrocarbons such as polychlorinated dibenzodioxins (PCDDs) and dibenzofurans (PCDFs). In chronic exposure it is not known what level of intoxication, represented by the level in blood lipids, is sufficient to cause chloracne. Blood levels of the congeners of PCDD/Fs were determined in four groups of humans. One group had clinically visible chloracne due to exposure in a hexachlorobenzene workshop of a large chemical factory. A second group was exposed in the same workshop, but had no skin changes. There were two control groups: one non-exposed group of maintenance workers from the same chemical factory, and one group of healthy individuals living elsewhere. Blood levels were converted to toxicity equivalents of tetrachlorodibenzo-p-dioxin (TCDD). In the chloracne group blood levels in toxicity equivalents (TEQs) ranged from 1168 to 22,308 pg/g blood lipid. In the exposed without chloracne this ranged from 424 to 662 pg/g. It is concluded that the level to develop chloracne is between 650 and 1200 pg/g TEQ. The contribution of TCDD was rather small, and the main causative congeners were the hexachlorinated dibenzodioxins and dibenzofurans (HxCDD/Fs); lipid-based blood levels in absolute amounts that may cause chloracne are in the range of 2-3.5 ng/g HxCDD, and 2-5 ng/g HxCDF.
氯痤疮是由接触某些卤代多环烃引起的,如多氯二苯并二恶英(PCDDs)和二苯并呋喃(PCDFs)。在慢性接触中,目前尚不清楚以血脂水平表示的何种中毒程度足以导致氯痤疮。对四组人群的多氯二苯并对二恶英/呋喃(PCDD/Fs)同系物的血液水平进行了测定。一组因在一家大型化工厂的六氯苯车间接触而出现临床上可见的氯痤疮。第二组在同一车间接触,但没有皮肤变化。有两个对照组:一组是来自同一家化工厂的未接触的维修工人,另一组是居住在其他地方的健康个体。血液水平被转换为四氯二苯并对二恶英(TCDD)的毒性当量。在氯痤疮组中,毒性当量(TEQs)的血液水平范围为1168至22308 pg/g血脂。在未出现氯痤疮的接触组中,这一范围为424至662 pg/g。得出的结论是,出现氯痤疮的水平在650至1200 pg/g TEQ之间。TCDD的贡献相当小,主要致病同系物是六氯二苯并二恶英和二苯并呋喃(HxCDD/Fs);可能导致氯痤疮的基于脂质的血液绝对水平范围为2 - 3.5 ng/g HxCDD和2 - 5 ng/g HxCDF。