Holmes JD, Johnston KP, Doty RC, Korgel BA
Department of Chemical Engineering and Texas Materials Institute, University of Texas, Austin, TX 78712, USA.
Science. 2000 Feb 25;287(5457):1471-3. doi: 10.1126/science.287.5457.1471.
Bulk quantities of defect-free silicon (Si) nanowires with nearly uniform diameters ranging from 40 to 50 angstroms were grown to a length of several micrometers with a supercritical fluid solution-phase approach. Alkanethiol-coated gold nanocrystals (25 angstroms in diameter) were used as uniform seeds to direct one-dimensional Si crystallization in a solvent heated and pressurized above its critical point. The orientation of the Si nanowires produced with this method could be controlled with reaction pressure. Visible photoluminescence due to quantum confinement effects was observed, as were discrete optical transitions in the ultraviolet-visible absorbance spectra.
采用超临界流体溶液相法生长出了大量直径几乎均匀、范围在40至50埃之间的无缺陷硅（Si）纳米线，其长度可达几微米。直径为25埃的烷硫醇包覆金纳米晶体被用作均匀晶种，以在高于临界点加热和加压的溶剂中引导一维硅结晶。用这种方法制备的硅纳米线的取向可以通过反应压力来控制。观察到了由于量子限制效应引起的可见光致发光，以及紫外 - 可见吸收光谱中的离散光学跃迁。
