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用于透射电子显微镜应用的多端口读出帧转移500万像素电荷耦合器件成像系统。

Multiport-readout frame-transfer 5 megapixel CCD imaging system for TEM applications.

作者信息

Fan G Y, Peltier S, Lamont S, Dunkelberger D G, Burke B E, Ellisman M H

机构信息

National Center for Microscopy and Imaging Research, Department of Neurosciences, School of Medicine, University of California, San Diego, La Jolla 92093-0608, USA.

出版信息

Ultramicroscopy. 2000 Jul;84(1-2):75-84. doi: 10.1016/s0304-3991(00)00021-8.

Abstract

A multiport-readout, frame-transfer charge-coupled device (CCD) digital imaging system has been successfully developed and tested for intermediate-high-voltage electron microscopy (IVEM) applications up to 400 keV. The system employs a back-thinned CCD with 2560 x 1960 pixels and a pixel size of 24 microm x 24 microm. In the current implementation, four of the eight on-chip readout ports are used in parallel each operating at a pixel rate of 1- or 2-MHz so that the entire CCD array can be read out in as short as 0.6 s. The frame-transfer readout functions as an electronic shutter which permits the rapid transfer of charges in the active pixels to four masked buffers where the charges are readout and digitized while the active area of the CCD is integrating the next frame. With a thin film-based phosphor screen and a high-performance lens relay, the system has a conversion factor of 2.1 digital units per incident electron at 400 keV, and a modulation transfer function value of 14% at the Nyquist frequency.

摘要

一种用于中高压电子显微镜(IVEM)应用(最高可达400keV)的多端口读出、帧转移电荷耦合器件(CCD)数字成像系统已成功开发并测试。该系统采用背照式CCD,有2560×1960像素,像素尺寸为24微米×24微米。在当前实现方式中,八个片上读出端口中的四个并行使用,每个端口以1或2MHz的像素速率运行,这样整个CCD阵列能在短至0.6秒内读出。帧转移读出起到电子快门的作用,它允许将有源像素中的电荷快速转移到四个屏蔽缓冲器中,在那里电荷被读出并数字化,而此时CCD的有源区域正在积分下一帧。通过基于薄膜的磷光屏和高性能透镜中继,该系统在400keV时每入射电子的转换因子为2.1数字单位,在奈奎斯特频率下调制传递函数值为14%。

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