Vitkalov SA, Zheng H, Mertes KM, Sarachik MP, Klapwijk TM
Physics Department, City College of the City University of New York, New York, New York 10031, USA.
Phys Rev Lett. 2000 Sep 4;85(10):2164-7. doi: 10.1103/PhysRevLett.85.2164.
Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of 2 increase of the frequency of Shubnikov-de Haas oscillations at H>H(sat). This signals the onset of full spin polarization above H(sat), the parallel field above which the resistivity saturates to a constant value. For H<H(sat), the phase of the second harmonic of the oscillations relative to the first is consistent with scattering events that depend on the overlap instead of the sum of the spin-up and spin-down densities of states. This unusual behavior may reflect the importance of many-body interactions.
