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大肠杆菌B/r的polA衍生物在亚致死剂量紫外线照射下的突变率升高:诱导性易错修复系统(“SOS修复”)的证据及其在这些菌株中的异常表达。

Elevated mutability of polA derivatives of Escherichia coli B/r at sublethal doses of ultraviolet light: evidence for an inducible error-prone repair system ("SOS repair") and its anomalous expression in these strains.

作者信息

Witkin E M

出版信息

Genetics. 1975 Jun;79 Suppl:199-213.

PMID:1097302
Abstract

The SOS repair hypothesis proposes that UV-induced mutations in E. coli are caused by an inducible error-prone repair system (SOS repair) which is normally induced coordinately with such other recApluslexplus-dependent functions as filamentous growth, prophage induction and W-reactivation-2 in response to UV or other inhibitors of DNA synthesis. Since polA-l strains induce these functions at unusually low doses of UV, the SOS hypothesis predicts elevated UV mutability for such strains at these low doses (50 ergs per mm2 and below) Strain WP6, a polA-1 derivative of B/r, exhibits the predicted high UV mutability in this dose range, producing ten times as many Trp+ mutations as its polA+ counterpart, strain WP1, at a dose of 12.5 ergs per mm-2. The UV sensitivity of a lex polA double mutant, in which the lex and polA mutations fail to exert their individual effects on UV sensitivity additively, also confirms a prediction generated by the SOS hypothesis.--The uvrA polA-1 strain WP67 also shows elevated UV mutability at very low UV doses (5 ergs per mm-2 and below), producing about ten times as many Trp+ mutations at a dose of 0.6 ergs per mm-2 as its uvrA polA+ parent strain WP2s. It is proposed that the double mutant induces the SOS repair system (and probably other "reclex" inducible functions) at unusually low doses of UV as a consequence of its relatively inefficient repair of DNA damage when plated on broth-supplemented media.

摘要

SOS修复假说提出,大肠杆菌中紫外线诱导的突变是由一种可诱导的易错修复系统(SOS修复)引起的,该系统通常与其他recA+lex+依赖的功能(如丝状生长、原噬菌体诱导和W-复活-2)协同诱导,以响应紫外线或其他DNA合成抑制剂。由于polA-1菌株在异常低剂量的紫外线照射下就能诱导这些功能,SOS假说预测,在这些低剂量(每平方毫米50尔格及以下)时,此类菌株的紫外线诱变率会升高。WP6菌株是B/r的polA-1衍生物,在这个剂量范围内表现出预测的高紫外线诱变率,在每平方毫米12.5尔格的剂量下,其产生的色氨酸+突变数量是其polA+对应菌株WP1的十倍。lex polA双突变体的紫外线敏感性,其中lex和polA突变对紫外线敏感性的单独影响不能累加,这也证实了SOS假说产生的一个预测。uvrA polA-1菌株WP67在非常低的紫外线剂量(每平方毫米5尔格及以下)下也表现出升高的紫外线诱变率,在每平方毫米0.6尔格的剂量下,其产生的色氨酸+突变数量约为其uvrA polA+亲本菌株WP28的十倍。有人提出,双突变体在异常低剂量的紫外线照射下就能诱导SOS修复系统(可能还有其他“reclex”可诱导功能),这是因为它在添加肉汤的培养基上平板培养时对DNA损伤的修复效率相对较低。

相似文献

1
Elevated mutability of polA derivatives of Escherichia coli B/r at sublethal doses of ultraviolet light: evidence for an inducible error-prone repair system ("SOS repair") and its anomalous expression in these strains.大肠杆菌B/r的polA衍生物在亚致死剂量紫外线照射下的突变率升高:诱导性易错修复系统(“SOS修复”)的证据及其在这些菌株中的异常表达。
Genetics. 1975 Jun;79 Suppl:199-213.
2
Ultraviolet mutagenesis in polA and UvrA polA derivatives of Escherichia coli B-R: evidence for an inducible error-prone repair system.大肠杆菌B-R的polA和UvrA polA衍生物中的紫外线诱变:诱导性易错修复系统的证据。
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[Enhanced UV sensitivity of Escherichia coli strain uvrA crp].[大肠杆菌uvrA crp菌株对紫外线的敏感性增强]
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[Radioadaptive enhancement of the repair of UV-induced postreplication gaps in Escherichia coli cells deficient in DNA repair].[DNA修复缺陷的大肠杆菌细胞中紫外线诱导的复制后间隙修复的辐射适应性增强]
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