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Instability-driven SiGe island growth.

作者信息

Tromp RM, Ross FM, Reuter MC

机构信息

IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA.

出版信息

Phys Rev Lett. 2000 May 15;84(20):4641-4. doi: 10.1103/PhysRevLett.84.4641.

DOI:10.1103/PhysRevLett.84.4641
PMID:10990760
Abstract

Three-dimensional islanding is generally assumed to proceed through nucleation and growth. Here we present studies showing the growth of Si1-xGex islands (0.2<x<0.6) without nucleation. Rather, a strain-driven growth instability induces a network of elevated cells, where the angle of elevation self-limits when 105 facets form pyramidal islands. These strain-modulated surfaces may serve as a template for the spatially controlled growth of quantum dot ensembles.

摘要

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