Qin XR, Swartzentruber BS, Lagally MG
University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
Phys Rev Lett. 2000 May 15;84(20):4645-8. doi: 10.1103/PhysRevLett.84.4645.
The positions of Ge atoms intermixed in the Si(100) surface at very low concentration are identified using empty-state imaging in scanning tunneling microscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions.
