Romanyuk Konstantin, Brona Jacek, Voigtländer Bert
Institute of Bio- and Nanosystems (IBN-3) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich, 52425 Jülich, Germany.
Phys Rev Lett. 2009 Aug 28;103(9):096101. doi: 10.1103/PhysRevLett.103.096101. Epub 2009 Aug 25.
The structural stability of two-dimensional (2D) SiGe nanostructures is studied by scanning tunneling microscopy. The formation of pits with a diameter of 2-30 nm in one atomic layer thick Ge stripes is observed. The unanticipated pit formation occurs due to an energetically driven motion of the Ge atoms out of the Ge stripe towards the Si terminated step edge followed by an entropy driven GeSi intermixing at the step edge. Using conditions where the pits coalesce results in the formation of freestanding 8 nm wide GeSi wires on Si(111).
通过扫描隧道显微镜研究了二维（2D）硅锗纳米结构的结构稳定性。在一原子层厚的锗条纹中观察到直径为2 - 30纳米的坑的形成。这种意外的坑的形成是由于锗原子从锗条纹向硅终止的台阶边缘进行能量驱动的运动，随后在台阶边缘发生熵驱动的锗硅混合。利用坑合并的条件，在硅（111）上形成了独立的8纳米宽的锗硅线。
