Ojeda F, Cuerno R, Salvarezza R, Vazquez L
Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, E-28049 Madrid, Spain.
Phys Rev Lett. 2000 Apr 3;84(14):3125-8. doi: 10.1103/PhysRevLett.84.3125.
We study the surface dynamics of silica films grown by low pressure chemical vapor deposition. Atomic force microscopy measurements show that the surface reaches a scale invariant stationary state compatible with the Kardar-Parisi-Zhang (KPZ) equation in three dimensions. At intermediate times the surface undergoes an unstable transient due to shadowing effects. By varying growth conditions and using spectroscopic techniques, we determine the physical origin of KPZ scaling to be a low value of the surface sticking probability, related to the surface concentration of reactive groups. We propose a stochastic equation that describes the qualitative behavior of our experimental system.
我们研究了通过低压化学气相沉积生长的二氧化硅薄膜的表面动力学。原子力显微镜测量表明，该表面达到了与三维的 Kardar-Parisi-Zhang（KPZ）方程兼容的尺度不变稳态。在中间时间，由于阴影效应，表面经历了一个不稳定的瞬态过程。通过改变生长条件并使用光谱技术，我们确定 KPZ 标度的物理起源是表面粘附概率的低值，这与反应基团的表面浓度有关。我们提出了一个描述我们实验系统定性行为的随机方程。
