Phillips J C
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA.
Proc Natl Acad Sci U S A. 1997 Sep 30;94(20):10528-31. doi: 10.1073/pnas.94.20.10528.
Recent experimental data on the conductivity final sigma+(T), T --> 0, on the metallic side of the metal-insulator transition in ideally random (neutron transmutation-doped) 70Ge:Ga have shown that final sigma+(0) ~ (N - Nc)mu with mu = (1/2), confirming earlier ultra-low-temperature results for Si:P. This value is inconsistent with theoretical predictions based on diffusive classical scaling models, but it can be understood by a quantum-directed percolative filamentary amplitude model in which electronic basis states exist which have a well-defined momentum parallel but not normal to the applied electric field. The model, which is based on a new kind of broken symmetry, also explains the anomalous sign reversal of the derivative of the temperature dependence in the critical regime.
近期关于理想随机(中子嬗变掺杂)的70Ge:Ga中金属-绝缘体转变金属侧电导率终值σ⁺(T)(T→0)的实验数据表明,终值σ⁺(0) ~ (N - Nc)μ,其中μ = (1/2),这证实了早期Si:P的超低温结果。该值与基于扩散经典标度模型的理论预测不一致,但可以通过量子定向渗流丝状振幅模型来理解,在该模型中存在电子基态,其具有明确的平行于但不垂直于外加电场的动量。该模型基于一种新型的破缺对称性,还解释了临界区域温度依赖性导数的异常符号反转。