Oxenham A J, Plack C J
Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
Hear Res. 2000 Dec;150(1-2):258-66. doi: 10.1016/s0378-5955(00)00206-9.
Forward masking has often been thought of in terms of neural adaptation, with nonlinearities in the growth and decay of forward masking being accounted for by the nonlinearities inherent in adaptation. In contrast, this study presents further evidence for the hypothesis that forward masking can be described as a linear process, once peripheral, mechanical nonlinearities are taken into account. The first experiment compares the growth of masking for on- and off-frequency maskers. Signal thresholds were measured as a function of masker level for three masker-signal intervals of 0, 10, and 30 ms. The brief 4-kHz sinusoidal signal was masked by a 200-ms sinusoidal forward masker which had a frequency of either 2.4 kHz (off-frequency) or 4 kHz (on-frequency). As in previous studies, for the on-frequency condition, the slope of the function relating signal threshold to masker level became shallower as the delay between the masker and signal was increased. In contrast, the slopes for the off-frequency condition were independent of masker-signal delay and had a value of around unity, indicating linear growth of masking for all masker-signal delays. In the second experiment, a broadband Gaussian noise forward masker was used to mask a brief 6-kHz sinusoidal signal. The spectrum level of the masker was either 0 or 40 dB (re: 20 microPa). The gap between the masker and signal was either 0 or 20 ms. Signal thresholds were measured for masker durations from 5 to 200 ms. The effect of masker duration was found to depend more on signal level than on gap duration or masker level. Overall, the results support the idea that forward masking can be modeled as a linear process, preceded by a static nonlinearity resembling that found on the basilar membrane.
前掩蔽通常被认为与神经适应有关,前掩蔽增长和衰减的非线性由适应过程中固有的非线性来解释。相比之下,本研究为以下假设提供了进一步的证据:一旦考虑到外周的机械非线性,前掩蔽可被描述为一个线性过程。第一个实验比较了同频和异频掩蔽器的掩蔽增长情况。在0、10和30毫秒的三个掩蔽器 - 信号间隔下,测量了信号阈值作为掩蔽器电平的函数。短暂的4千赫兹正弦信号由一个200毫秒的正弦前掩蔽器掩蔽,该掩蔽器的频率要么是2.4千赫兹(异频),要么是4千赫兹(同频)。与之前的研究一样,在同频条件下,随着掩蔽器和信号之间延迟的增加,信号阈值与掩蔽器电平之间函数的斜率变得更平缓。相比之下,异频条件下的斜率与掩蔽器 - 信号延迟无关,其值约为1,表明在所有掩蔽器 - 信号延迟下掩蔽呈线性增长。在第二个实验中,使用宽带高斯噪声前掩蔽器来掩蔽一个短暂的6千赫兹正弦信号。掩蔽器的频谱电平要么是0分贝,要么是40分贝(相对于20微帕)。掩蔽器和信号之间的间隔要么是0毫秒,要么是20毫秒。测量了掩蔽器持续时间从5到200毫秒时的信号阈值。发现掩蔽器持续时间的影响更多地取决于信号电平,而不是间隔持续时间或掩蔽器电平。总体而言,结果支持了前掩蔽可以被建模为一个线性过程的观点,该过程之前有一个类似于在基底膜上发现的静态非线性。