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通过自旋极化扫描隧道谱研究Cr(001)表面的拓扑诱导自旋阻挫

Topology-induced spin frustrations at the Cr(001) surface studied by spin-polarized scanning tunneling spectroscopy.

作者信息

Kleiber M, Bode M, Ravlic R, Wiesendanger R

机构信息

Institute of Applied Physics and Microstructure Research Center, University of Hamburg, Jungiusstrasse 11, D-20355 Hamburg, Germany.

出版信息

Phys Rev Lett. 2000 Nov 20;85(21):4606-9. doi: 10.1103/PhysRevLett.85.4606.

DOI:10.1103/PhysRevLett.85.4606
PMID:11082607
Abstract

The magnetic structure of the Cr(001) surface was investigated by spin-polarized scanning tunneling spectroscopy by making use of the spin-polarized surface state located close to the Fermi level. Periodic alternations of the intensity of the surface state peak in local tunneling spectra measured above different ferromagnetic terraces separated by monatomic steps confirm the topological antiferromagnetic order of the Cr(001) surface. Screw dislocations cause topology-induced spin frustration, leading to the formation of domain walls with a width of about 120 nm.

摘要

利用靠近费米能级的自旋极化表面态,通过自旋极化扫描隧道谱对Cr(001)表面的磁结构进行了研究。在由单原子台阶分隔的不同铁磁平台上方测量的局部隧道谱中,表面态峰强度的周期性交替证实了Cr(001)表面的拓扑反铁磁序。螺旋位错导致拓扑诱导的自旋受挫,从而形成宽度约为120 nm的畴壁。

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