Inoue J, Nonoyama S, Itoh H
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan and and CREST, Japan Science and Technology Corporation (JST), Japan.
Phys Rev Lett. 2000 Nov 20;85(21):4610-3. doi: 10.1103/PhysRevLett.85.4610.
We calculate the electronic states of the Mn-doped semiconductors and show that resonant states are formed at the top of the down spin valence band due to magnetic impurities and that they give rise to a strong and long-ranged ferromagnetic coupling between Mn moments. We propose that the coupling of the resonant states, in addition to the intra-atomic exchange interaction between the resonant and nonbonding states, is the origin of the ferromagnetism of (Ga-Mn)As. The mechanism is thus called "double resonance." The resonant states bring about the spin-dependent resistivity to produce magnetoresistive properties in (Ga-Mn)As and their junctions.
我们计算了锰掺杂半导体的电子态，结果表明由于磁性杂质，向下自旋价带顶部形成了共振态，并且这些共振态在锰磁矩之间产生了强且长程的铁磁耦合。我们提出，共振态的耦合，除了共振态与非键合态之间的原子内交换相互作用之外，是（镓 - 锰）砷铁磁性的起源。因此，该机制被称为“双共振”。共振态导致了自旋相关的电阻率，从而在（镓 - 锰）砷及其结中产生磁阻特性。
