稀磁半导体（Ga,Mn）As中磁性杂质态的电子激发
Electronic excitations of a magnetic impurity state in the diluted magnetic semiconductor (Ga,Mn)As.
作者信息
Kobayashi M, Niwa H, Takeda Y, Fujimori A, Senba Y, Ohashi H, Tanaka A, Ohya S, Hai P N, Tanaka M, Harada Y, Oshima M
机构信息
Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and Synchrotron Radiation Research Organization, The University of Tokyo, 1-490-2 Kouto, Sayo-cho, Tatsuno, Hyogo 679-5165, Japan.
Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and Synchrotron Radiation Research Organization, The University of Tokyo, 1-490-2 Kouto, Sayo-cho, Tatsuno, Hyogo 679-5165, Japan and Institute for Solid State Physics, The University of Tokyo, 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan.
出版信息
Phys Rev Lett. 2014 Mar 14;112(10):107203. doi: 10.1103/PhysRevLett.112.107203. Epub 2014 Mar 12.
The electronic structure of doped Mn in (Ga,Mn)As is studied by resonant inelastic x-ray scattering. From configuration-interaction cluster-model calculations, the line shapes of the Mn L3 resonant inelastic x-ray scattering spectra can be explained by d-d excitations from the Mn ground state dominated by charge-transferred states, in which hole carriers are bound to the Mn impurities, rather than a pure acceptor Mn2+ ground state. Unlike archetypical d-d excitation, the peak widths are broader than the experimental energy resolution. We attribute the broadening to a finite lifetime of the d-d excitations, which decay rapidly to electron-hole pairs in the host valence and conduction bands through the hybridization of the Mn 3d orbital with the ligand band.
通过共振非弹性X射线散射研究了（Ga，Mn）As中掺杂Mn的电子结构。根据组态相互作用团簇模型计算，Mn L3共振非弹性X射线散射光谱的线形可以用由电荷转移态主导的Mn基态的d-d激发来解释，其中空穴载流子与Mn杂质结合，而不是纯受主Mn2+基态。与典型的d-d激发不同，峰宽比实验能量分辨率宽。我们将这种展宽归因于d-d激发的有限寿命，其通过Mn 3d轨道与配体带的杂化迅速衰变为主体价带和导带中的电子-空穴对。
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