共振隧穿进入偏置分数量子霍尔边缘。

Resonant tunneling into a biased fractional quantum Hall edge.

作者信息

Grayson M, Tsui D C, Pfeiffer L N, West K W, Chang A M

机构信息

Department of Electrical Engineering, Princeton University, NJ 08544, USA.

出版信息

Phys Rev Lett. 2001 Mar 19;86(12):2645-8. doi: 10.1103/PhysRevLett.86.2645.

DOI:10.1103/PhysRevLett.86.2645

PMID:11290001

Abstract

We observe resonant tunneling into a voltage biased fractional quantum Hall effect (FQHE) edge, using atomically sharp tunnel barriers unique to cleaved-edge overgrown devices. The resonances demonstrate different tunnel couplings to the metallic lead and the FQHE edge. Weak coupling to the FQHE edge produces clear non-Fermi liquid behavior with a sixfold increase in resonance area under bias arising from the power law density of states at the FQHE edge. A simple device model uses the resonant tunneling formalism for chiral Luttinger liquids to successfully describe the data.

摘要

我们利用劈裂边缘过生长器件特有的原子级尖锐隧道势垒，观测到向电压偏置的分数量子霍尔效应（FQHE）边缘的共振隧穿。这些共振表现出与金属引线和FQHE边缘不同的隧道耦合。与FQHE边缘的弱耦合产生了清晰的非费米液体行为，在偏置下共振面积增加了六倍，这是由于FQHE边缘态密度的幂律所致。一个简单的器件模型使用手性卢廷格液体的共振隧穿形式理论成功地描述了这些数据。