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量子霍尔 regime 中窄隧道结中的零偏异常。

Zero-bias anomalies in narrow tunnel junctions in the quantum Hall regime.

机构信息

James Franck Institute and Department of Physics, University of Chicago, Chicago, Illinois 60637, USA.

出版信息

Phys Rev Lett. 2010 Dec 10;105(24):246801. doi: 10.1103/PhysRevLett.105.246801. Epub 2010 Dec 7.

Abstract

We report on the study of cleaved-edge-overgrown line junctions with a serendipitously created narrow opening in an otherwise thin, precise line barrier. Two sets of zero-bias anomalies are observed with an enhanced conductance for filling factors ν>1 and a strongly suppressed conductance for ν<1. A transition between the two behaviors is found near ν≈1. The zero-bias anomaly (ZBA) line shapes find explanation in Luttinger liquid models of tunneling between quantum Hall edge states. The ZBA for ν<1 occurs from strong backscattering induced by suppression of quasiparticle tunneling between the edge channels for the n=0 Landau levels. The ZBA for ν>1 arises from weak tunneling of quasiparticles between the n=1 edge channels.

摘要

我们研究了在薄而精确的线势垒中意外形成的狭窄开口处的劈裂边缘过生长线结。在零偏压下观察到两组异常现象,填充因子 ν>1 时电导率增强, ν<1 时电导率强烈抑制。在 ν≈1 附近发现了两种行为之间的转变。零偏压异常(ZBA)线形状可以用隧道量子霍尔边缘态之间的 Luttinger 液体模型来解释。 ν<1 时的 ZBA 是由抑制 n=0 朗道能级的边缘通道之间的准粒子隧道引起的强背散射引起的。 ν>1 时的 ZBA 是由于 n=1 边缘通道之间的准粒子弱隧道引起的。

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