Okuma S, Imamoto Y, Morita M
Research Center for Very Low Temperature System, Tokyo Institute of Technology, 2-12-1, Ohokayama, Meguro-ku, Tokyo 152-8551, Japan.
Phys Rev Lett. 2001 Apr 2;86(14):3136-9. doi: 10.1103/PhysRevLett.86.3136.
We present measurements of ac complex resistivity, as well as dc resistivity, for a thick amorphous MoxSi1-x film at low temperatures ( T>0.04 K) in various constant fields B. We find that the vortex glass transition (VGT) persists down to T approximately 0.04Tc0 up to B approximately 0.9Bc2(0), where Tc0 and Bc2(0) are the mean-field transition temperature and upper critical field at T = 0, respectively. In the limit T-->0, the VGT line Bg(T) extrapolates to a field below Bc2(0), while the dc resistivity rho(T) tends to the finite nonzero value in fields just above Bg(0). These results indicate the presence of a metallic quantum vortex liquid at T = 0 in the regime Bg(0)<B<Bc2(0).
我们展示了在各种恒定磁场B下，对厚非晶态MoxSi1-x薄膜在低温（T>0.04 K）时的交流复电阻率以及直流电阻率的测量结果。我们发现，涡旋玻璃转变（VGT）一直持续到大约0.04Tc0的温度，直至大约0.9Bc2(0)的磁场，其中Tc0和Bc2(0)分别是T = 0时的平均场转变温度和上临界场。在T→0的极限情况下，VGT线Bg(T)外推到低于Bc2(0)的磁场，而直流电阻率ρ(T)在略高于Bg(0)的磁场中趋于有限的非零值。这些结果表明，在Bg(0)<B<Bc2(0)的区域中，T = 0时存在金属量子涡旋液体。
