Okuma S, Togo S, Morita M
Research Center for Low Temperature Physics, Tokyo Institute of Technology, 2-12-1, Ohokayama, Meguro-ku, Tokyo 152-8551, Japan.
Phys Rev Lett. 2003 Aug 8;91(6):067001. doi: 10.1103/PhysRevLett.91.067001. Epub 2003 Aug 4.
Effects of normal-state resistivity rho(n) on the vortex phase diagram at low temperature T have been studied based on dc and ac complex resistivities for thick amorphous MoxSi(1-x) films. It is commonly observed irrespective of rho(n) that, in the limit T=0, the vortex-glass-transition line B(g)(T) is independent of T and extrapolates to a field below the T=0 upper critical field B(c2)(0), indicative of the quantum-vortex-liquid (QVL) phase in the regime B(g)(0)<B<B(c2)(0). The relative width of the QVL phase increases along the B and T axes approximately proportional to rho(n). This result is consistent with a view that the QVL phase is caused by strong quantum fluctuations, which are enhanced with increasing rho(n).
基于厚非晶态MoxSi(1-x)薄膜的直流和交流复电阻率，研究了正常态电阻率ρ(n)对低温T下涡旋相图的影响。不管ρ(n)如何，通常观察到在T = 0的极限情况下，涡旋玻璃转变线B(g)(T)与T无关，并外推到低于T = 0上临界场B(c2)(0)的场，这表明在B(g)(0)<B<B(c2)(0)区域存在量子涡旋液体(QVL)相。QVL相的相对宽度沿B轴和T轴增加，大致与ρ(n)成正比。这一结果与QVL相是由强量子涨落引起的观点一致，强量子涨落随着ρ(n)的增加而增强。
