高电荷离子对绝缘体的动力学辅助势溅射

Kinetically assisted potential sputtering of insulators by highly charged ions.

作者信息

Hayderer G, Cernusca S, Schmid M, Varga P, Winter H, Aumayr F, Niemann D, Hoffmann V, Stolterfoht N, Lemell C, Wirtz L, Burgdörfer J

机构信息

Institut für Allgemeine Physik, TU Wien, Wiedner Hauptstrasse 8-10, A-1040 Vienna, Austria.

出版信息

Phys Rev Lett. 2001 Apr 16;86(16):3530-3. doi: 10.1103/PhysRevLett.86.3530.

DOI:10.1103/PhysRevLett.86.3530

PMID:11328015

Abstract

A new form of potential sputtering has been found for impact of slow ( < or = 1500 eV) multiply charged Xe ions (charge states up to q = 25) on MgO(x). In contrast to alkali-halide or SiO2 surfaces this mechanism requires the simultaneous presence of electronic excitation of the target material and of a kinetically formed collision cascade within the target in order to initiate the sputtering process. This kinetically assisted potential sputtering mechanism has been identified to be present for other insulating surfaces as well.

摘要

人们发现，当慢速（≤1500电子伏特）的多电荷氙离子（电荷态高达q = 25）撞击MgO(x)时，会出现一种新的潜在溅射形式。与碱金属卤化物或SiO2表面不同，这种机制要求靶材料同时存在电子激发以及靶内动态形成的碰撞级联，以便启动溅射过程。现已确定，这种动力学辅助的潜在溅射机制在其他绝缘表面也存在。