Dreiner S, Schürmann M, Westphal C, Zacharias H
Westfälische Wilhelms-Universität Münster, Physikalisches Institut, Wilhelm-Klemm-Strasse 10, 48149 Münster, Germany.
Phys Rev Lett. 2001 Apr 30;86(18):4068-71. doi: 10.1103/PhysRevLett.86.4068.
Local environments of Si suboxides at the interface between a thermally grown SiO2 film and Si(111) were studied by angle-scanned photoelectron diffraction. Si 2p core-level spectra containing chemically shifted components were recorded. The components were deconvoluted by least squares fitting and assigned to different Si oxidation states. The obtained diffraction patterns of the various suboxides exhibit different features. Comparison of these patterns with multiple scattering calculations including a multipole R-factor analysis shows that a simple chemical abrupt interface model describes well the environment of the suboxides and indicates ordered SiO2 close to the interface.
通过角扫描光电子衍射研究了热生长SiO₂薄膜与Si(111)界面处Si的低价氧化物的局部环境。记录了包含化学位移成分的Si 2p芯能级光谱。通过最小二乘法拟合对这些成分进行解卷积，并将其指定为不同的Si氧化态。各种低价氧化物获得的衍射图案表现出不同的特征。将这些图案与包括多极R因子分析在内的多重散射计算进行比较，结果表明，一个简单的化学突变界面模型能够很好地描述低价氧化物的环境，并表明靠近界面处存在有序的SiO₂。
