Shen Y, Klein M W, Jacobs D B, Campbell Scott J, Malliaras G G
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1503, USA.
Phys Rev Lett. 2001 Apr 23;86(17):3867-70. doi: 10.1103/PhysRevLett.86.3867.
Measurements of charge injection from indium tin oxide (ITO) into the organic semiconductor, tetraphenyl diamine doped polycarbonate (PC:TPD), were carried out. The current injected at the contact was measured as a function of the hole mobility in the organic semiconductor, which was varied from 10(-6) to 10(-3) cm (2)/V x s by adjusting the concentration of the hole transport agent, TPD, in the PC host. These experiments reveal that the current injected at the contact is proportional to the hole mobility in the bulk. As a result, the ITO/PC:TPD contact is found to limit current flow in all samples, regardless of the hole mobility in PC:TPD.
进行了从氧化铟锡（ITO）向有机半导体四苯基二胺掺杂聚碳酸酯（PC:TPD）的电荷注入测量。测量了在接触处注入的电流作为有机半导体中空穴迁移率的函数，通过调节PC主体中空穴传输剂TPD的浓度，使空穴迁移率在10^(-6)至10^(-3) cm²/V·s之间变化。这些实验表明，在接触处注入的电流与本体中的空穴迁移率成正比。结果发现，无论PC:TPD中的空穴迁移率如何，ITO/PC:TPD接触都会限制所有样品中的电流流动。
