Ullrich C A, Vignale G
iQUEST, University of California, Santa Barbara, California 93106, USA.
Phys Rev Lett. 2001 Jul 16;87(3):037402. doi: 10.1103/PhysRevLett.87.037402. Epub 2001 Jul 2.
Intersubband (ISB) plasmons in remotely doped wide quantum wells acquire a linewidth even at zero temperature and in-plane wave vector q(parallel) = 0 by a combination of intrinsic (electron-electron interaction) and extrinsic effects (impurities and interface roughness). We present a quantitatively accurate theory of the linewidth that treats both effects on equal footing and from first principles by a combination of time-dependent density-functional theory with the memory function formalism. Comparison with recent optical absorption experiments shows that the ISB plasmon linewidth has a significant contribution from electron-electron interaction, and is only weakly related to the mobility.
远程掺杂宽量子阱中的子带间（ISB）等离激元即使在零温度且面内波矢q（平行） = 0时，也会由于本征（电子 - 电子相互作用）和非本征效应（杂质和界面粗糙度）的综合作用而获得线宽。我们提出了一种对线宽进行定量精确的理论，该理论通过将含时密度泛函理论与记忆函数形式相结合，从第一性原理出发平等地处理这两种效应。与近期的光吸收实验比较表明，ISB等离激元线宽有很大一部分来自电子 - 电子相互作用，并且与迁移率的关系较弱。
