Ullrich C A, Vignale G
iQUEST, University of California, Santa Barbara, California 93106, USA.
Phys Rev Lett. 2001 Jul 16;87(3):037402. doi: 10.1103/PhysRevLett.87.037402. Epub 2001 Jul 2.
Intersubband (ISB) plasmons in remotely doped wide quantum wells acquire a linewidth even at zero temperature and in-plane wave vector q(parallel) = 0 by a combination of intrinsic (electron-electron interaction) and extrinsic effects (impurities and interface roughness). We present a quantitatively accurate theory of the linewidth that treats both effects on equal footing and from first principles by a combination of time-dependent density-functional theory with the memory function formalism. Comparison with recent optical absorption experiments shows that the ISB plasmon linewidth has a significant contribution from electron-electron interaction, and is only weakly related to the mobility.
远程掺杂宽量子阱中的子带间(ISB)等离激元即使在零温度且面内波矢q(平行) = 0时,也会由于本征(电子 - 电子相互作用)和非本征效应(杂质和界面粗糙度)的综合作用而获得线宽。我们提出了一种对线宽进行定量精确的理论,该理论通过将含时密度泛函理论与记忆函数形式相结合,从第一性原理出发平等地处理这两种效应。与近期的光吸收实验比较表明,ISB等离激元线宽有很大一部分来自电子 - 电子相互作用,并且与迁移率的关系较弱。