On-wafer spectrofluorometric method for determination of relative quantum yields of photoacid generation in chemically amplified resists.

Chemically amplified resists (CARs) that employ acid catalysts are widely used throughout the semiconductor industry due to the need for high throughput in the lithography process. The quantum yield of the particular photoacid generator (PAG) used to generate a given acid ultimately limits the photospeed of the CAR. Determination of quantum yields of photoacid generation is therefore an important component of resist design. We report the development of an on-wafer spectrofluorometric technique for this purpose. This technique is based on one first reported by Feke et al. (J. Vac. Sci. Technol. 2000, B18, 136- 139), which involves doping the resist formulations containing the candidate PAGs with a fluorescent pH indicator dye, coating one wafer per PAG, patterning the wafers with a dose ramp, and spectroscopically imaging the wafers. The response curve of each PAG is spatially and spectrally encoded in the fluorescence images of each wafer. We investigate the efficacy of coumarin 6, a dye that was introduced as an acid sensor by Pohlers et al. (Chem. Mater. 1997, 9, 3222-3230) for this application. We further apply this technique to the determination of the quantum yield of photoacid generation of four candidate PAGs for prototype 193-nm CARs. This technique is convenient, fast, robust, and nondestructive.