Jung Jin Hyuck, Kim Min Jeong, Sohn Kyung Hwa, Kang Ha Na, Kang Man Kyu, Lee Haiwon
J Nanosci Nanotechnol. 2015 Feb;15(2):1764-6. doi: 10.1166/jnn.2015.9330.
Photoacid generators (PAGs) have been widely used as a key component for improving photoresist performance. The acid diffusion influences on the photoresist characteristics of resolution and line edge roughness (LER). The PAG bound polymer resist has been a key component for solving the problems of PAG aggregation and acid diffusion control. A triphenyl sulfonium salt methacrylate as PAG was synthesized and copolymerized with crosslinkable glycidyl methacrylate and methyl methacrylate by radical reaction for a new PAG bound polymer resist. The characterization of resist polymers was carried out by 1H NMR. The lithographic performance of photoresists was investigated by ArF lithography. Both PAG bound resist and the PAG blended resist were employed to demonstrate the effect of PAG unit in a resist system. The polymer bound PAG resist improved the LER and showed a higher resolution than the PAG blend resist.
光产酸剂(PAGs)已被广泛用作提高光刻胶性能的关键组件。酸扩散会影响光刻胶的分辨率和线边缘粗糙度(LER)等特性。聚合物结合型PAG光刻胶一直是解决PAG聚集和酸扩散控制问题的关键组件。通过自由基反应合成了一种作为PAG的三苯基锍盐甲基丙烯酸酯,并将其与可交联的甲基丙烯酸缩水甘油酯和甲基丙烯酸甲酯共聚,以制备一种新型的聚合物结合型PAG光刻胶。通过1H NMR对光刻胶聚合物进行了表征。通过ArF光刻技术研究了光刻胶的光刻性能。使用聚合物结合型PAG光刻胶和PAG共混光刻胶来证明PAG单元在光刻胶体系中的作用。聚合物结合型PAG光刻胶改善了LER,并且比PAG共混光刻胶具有更高的分辨率。