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基于邻苯二甲醛衍生物的模块化合成方法,实现了与光酸产生剂键合的自耗蚀型聚合物抗蚀剂,具有下一代光刻性能。

Modular Synthesis of Phthalaldehyde Derivatives Enabling Access to Photoacid Generator-Bound Self-Immolative Polymer Resists with Next-Generation Photolithographic Properties.

机构信息

Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, United States.

Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States.

出版信息

J Am Chem Soc. 2022 Oct 26;144(42):19508-19520. doi: 10.1021/jacs.2c08202. Epub 2022 Oct 8.

DOI:10.1021/jacs.2c08202
PMID:36208192
Abstract

The resolution, line edge roughness, and sensitivity (RLS) trade-off has fundamentally limited the lithographic performance of chemically amplified resists. Production of next-generation transistors using extreme ultraviolet (EUV) lithography depends on a solution to this problem. A resist that simultaneously increases the effective reaction radius of its photogenerated acids while limiting their diffusion radius should provide an elegant solution to the RLS barrier. Here, we describe a generalized synthetic approach to phthalaldehyde derivatives using sulfur(VI) fluoride exchange click chemistry that dramatically expands usable chemical space by enabling virtually any non-ionic photoacid generator (PAG) to be tethered to phthalaldehyde. The resulting polymers represent the first ever PAG-tethered self-immolative resists in an architecture that simultaneously displays high contrast, extraordinary sensitivity, and low roughness under EUV exposure. We believe this class of resists will ultimately enable researchers to overcome the RLS trade-off.

摘要

分辨率、线边缘粗糙度和灵敏度(RLS)之间的权衡限制了化学放大抗蚀剂的光刻性能。使用极紫外(EUV)光刻技术生产下一代晶体管取决于如何解决这个问题。一种同时增加其光生酸的有效反应半径,同时限制其扩散半径的抗蚀剂,应该为解决 RLS 障碍提供一个优雅的解决方案。在这里,我们描述了一种使用硫(VI)氟化物交换点击化学的邻苯二醛衍生物的通用合成方法,通过使几乎任何非离子光酸产生剂(PAG)与邻苯二醛连接,极大地扩展了可用的化学空间。所得到的聚合物代表了首次在一个结构中显示出高对比度、非凡的灵敏度和低粗糙度的 PAG 键合自耗性抗蚀剂,在 EUV 曝光下。我们相信,这类抗蚀剂最终将使研究人员能够克服 RLS 权衡。

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