Inui M, Matsusaka T, Ishikawa D, Sakaguchi Y, Hong X, Kazi M H, Tamura K
Faculty of Integrated Arts and Sciences, Hiroshima University, Higashi-Hiroshima, Japan.
J Synchrotron Radiat. 2001 Mar 1;8(Pt 2):767-9. doi: 10.1107/s0909049500016058.
EXAFS measurements around the Ge-K edge have been carried out for liquid Ge-Si alloys for the first time to investigate the local structure around a Ge atom. To perform the EXAFS measurements for the liquid alloys with high melting temperatures, a new sapphire cell have been developed. The measurements were carried out for the liquid alloys from 10% to 60% of Si and the crystalline ones from 10% to 70% of Si as a reference. EXAFS oscillations, x(k), are observed even at 1480 degrees C for liquid Ge(0.4)Si(0.6). The position of the first peak in the radial distribution function obtained from Fourier transform of x(k) is shifted towards smaller distance for liquid and crystalline alloys with increasing Si concentration. The results of a curve-fit analysis in a harmonic approximation show that Ge-Ge and Ge-Si bonds in the liquid alloys become long with increasing Si concentration while those become slightly short in the crystaline ones.
首次对液态锗硅合金进行了锗 K 边附近的扩展 X 射线吸收精细结构(EXAFS)测量,以研究锗原子周围的局部结构。为了对具有高熔点的液态合金进行 EXAFS 测量,开发了一种新型蓝宝石池。对硅含量从 10%到 60%的液态合金以及硅含量从 10%到 70%的晶体合金作为参考进行了测量。对于液态 Ge(0.4)Si(0.6),即使在 1480 摄氏度时也观察到了 EXAFS 振荡,即 x(k)。从 x(k) 的傅里叶变换得到的径向分布函数中第一个峰的位置,对于液态和晶体合金,随着硅浓度的增加向更小的距离移动。在谐波近似下的曲线拟合分析结果表明,液态合金中 Ge-Ge 和 Ge-Si 键随着硅浓度的增加而变长,而在晶体合金中这些键则略有缩短。