Hu Y F, Sham T K, Zou Z, Xu G Q, Chan L, Yates B W, Bancroft G M
Canadian Synchrotron Radiation Facility, University of Wisconsin-Madison, 53589, USA.
J Synchrotron Radiat. 2001 Mar 1;8(Pt 2):860-2. doi: 10.1107/s0909049500018252.
We report a multi-elment, multi-edge and multi-detection mode X-ray photoabsorption study of a series of Al/TiN(x)/Si(100) thin films as a function of the TiN(x) film thickness (100A-500A) and of the annealing temperature (400 degrees C-600 degrees C). The Si K- and L-edge results show that Si does not diffuse to the surface for all the films. The high resolution Ti L-edge and N K-edge spectra show that the TiN(x) layer undergoes a dramatic chemical reaction with the gradual increase in the annealing temperature. This chemical reaction stabilizes at 560 degrees C at which the TiN(x) film is known to fail to act as an effective diffusion barrier between Al and Si.
我们报告了一系列Al/TiN(x)/Si(100)薄膜的多元素、多边缘和多检测模式X射线光吸收研究，该研究是作为TiN(x)薄膜厚度（100埃至500埃）和退火温度（400摄氏度至600摄氏度）的函数进行的。Si K边缘和L边缘结果表明，对于所有薄膜，Si都不会扩散到表面。高分辨率Ti L边缘和N K边缘光谱表明，随着退火温度的逐渐升高，TiN(x)层会发生剧烈的化学反应。这种化学反应在560摄氏度时稳定下来，已知在此温度下TiN(x)薄膜无法在Al和Si之间起到有效的扩散阻挡作用。
