Schön J H, Kloc C, Batlogg B
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974, USA.
Science. 2001 Sep 28;293(5539):2432-4. doi: 10.1126/science.1064773. Epub 2001 Aug 30.
C60 single crystals have been intercalated with CHCl3 and CHBr3 in order to expand the lattice. High densities of electrons and holes have been induced by gate doping in a field-effect transistor geometry. At low temperatures, the material turns superconducting with a maximum transition temperature of 117 K in hole-doped C60/CHBr3. The increasing spacing between the C60 molecules follows the general trend of alkali metal-doped C60 and suggests routes to even higher transition temperatures.
为了扩展晶格,已将C60单晶与CHCl3和CHBr3进行了插层。在场效应晶体管几何结构中,通过栅极掺杂诱导出了高密度的电子和空穴。在低温下,该材料会转变为超导体,在空穴掺杂的C60/CHBr3中,最大转变温度为117K。C60分子之间间距的增加遵循碱金属掺杂C60的一般趋势,并为实现更高的转变温度指明了方向。