Schön J H, Kloc C, Batlogg B
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974, USA.
Nature. 2000 Nov 30;408(6812):549-52. doi: 10.1038/35046008.
Superconductivity in electron-doped C60 was first observed almost ten years ago. The metallic state and superconductivity result from the transfer of electrons from alkaline or alkaline-earth ions to the C60 molecule, which is known to be a strong electron acceptor. For this reason, it is very difficult to remove electrons from C60--yet one might expect to see superconductivity at higher temperatures in hole-doped than in electron-doped C60, because of the higher density of electronic states in the valence band than in the conduction band. We have used the technique of gate-induced doping in a field-effect transistor configuration to introduce significant densities of holes into C60. We observe superconductivity over an extended range of hole density, with a smoothly varying transition temperature Tc that peaks at 52 K. By comparison with the well established dependence of Tc on the lattice parameter in electron-doped C60, we anticipate that Tc values significantly in excess of 100 K should be achievable in a suitably expanded, hole-doped C60 lattice.
电子掺杂C60中的超导现象几乎是在十年前首次被观测到的。金属态和超导性是由碱金属或碱土金属离子向C60分子转移电子所致,C60是一种强电子受体。因此,从C60中移除电子非常困难——不过,由于价带中的电子态密度高于导带,人们可能会预期在空穴掺杂的C60中比在电子掺杂的C60中能看到更高温度下的超导现象。我们利用场效应晶体管配置中的栅极诱导掺杂技术,将大量空穴引入C60。我们在很宽的空穴密度范围内观测到了超导现象,其转变温度Tc平滑变化,在52K时达到峰值。通过与电子掺杂C60中已确立的Tc与晶格参数的依赖关系进行比较,我们预计在适当扩展的空穴掺杂C60晶格中,Tc值应能显著超过100K。